发明授权
US4440580A Method of fabricating an integrated bipolar planar transistor by
implanting base and emitter regions through the same insulating layer
失效
通过将基极和发射极区域注入同一绝缘层来制造集成双极平面晶体管的方法
- 专利标题： Method of fabricating an integrated bipolar planar transistor by implanting base and emitter regions through the same insulating layer
- 专利标题（中）： 通过将基极和发射极区域注入同一绝缘层来制造集成双极平面晶体管的方法
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申请号： US364156申请日： 1982-03-31
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公开(公告)号： US4440580A公开(公告)日： 1984-04-03
- 发明人: Hans-Juergen Gahle
- 申请人： Hans-Juergen Gahle
- 申请人地址： NY New York
- 专利权人： ITT Industries, Inc.
- 当前专利权人： ITT Industries, Inc.
- 当前专利权人地址： NY New York
- 优先权： DEX3115029 19810414
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/033 ; H01L21/265 ; H01L21/331 ; H01L21/8222 ; H01L27/06 ; H01L21/223 ; H01L21/72
摘要：
The invention relates to an ion-implantation process for fabricating integrated bipolar planar transistors, particularly transistors for very high frequencies. To prevent the variations in the thicknesss of the insulating layer, through which the dopants for the base region are implanted into the semiconductor body in the form of ions, from causing variations in current gain, the dopants for the emitter regions are implanted through the same insulating layer as the dopants for the base region. The total charge in the base region below the emitter region thus becomes substantially independent of thickness variations of the insulating layer through which the dopants for the emitter region and those for the base region are implanted.
公开/授权文献
- US4961416A Knee brace 公开/授权日：1990-10-09
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