发明授权
- 专利标题： High-breakdown-voltage semiconductor device
- 专利标题（中）： 高击穿电压半导体器件
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申请号： US231285申请日： 1981-02-04
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公开(公告)号： US4443812A公开(公告)日： 1984-04-17
- 发明人: Ichiro Imaizumi , Masatoshi Kimura , Shikayuki Ochi , Masayoshi Yoshimura , Takashi Yamaguchi , Toyomasa Koda
- 申请人： Ichiro Imaizumi , Masatoshi Kimura , Shikayuki Ochi , Masayoshi Yoshimura , Takashi Yamaguchi , Toyomasa Koda
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX55-11506 19800204
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L21/768 ; H01L21/822 ; H01L23/522 ; H01L27/04 ; H01L29/06 ; H01L29/08 ; H01L29/40 ; H01L29/73 ; H01L29/8605 ; H01L29/44 ; H01L29/72
摘要：
A high-breakdown-voltage semiconductor device wherein a resistor body made of a P-type impurity region is disposed in a surface region of an N-type semiconductor body so as to form a resistor element, a P-type low doped region is disposed around the resistor body, and a plate layer which extends from a high potential electrode of the resistor body covers a main part of the P-type low doped region.
公开/授权文献
- US6125033A Reconfigurable enclosure panel for a mobile computer 公开/授权日：2000-09-26
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