Controlled thermal-oxidation thinning of polycrystalline silicon

Invention Grant

US4454002A Controlled thermal-oxidation thinning of polycrystalline silicon 失效

Title translation: 多晶硅的热氧化变薄控制

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Patent Title: Controlled thermal-oxidation thinning of polycrystalline silicon
Patent Title (中): 多晶硅的热氧化变薄控制
Application No.: US533584

Application Date: 1983-09-19
Publication No.: US4454002A

Publication Date: 1984-06-12
Inventor: Kevin T. Hankins
Applicant: Kevin T. Hankins
Applicant Address: FL Melbourne
Assignee: Harris Corporation
Current Assignee: Harris Corporation
Current Assignee Address: FL Melbourne
Main IPC: H01L21/321
IPC: H01L21/321 ; H01L23/525 ; H01L21/306 ; B44C1/22 ; C03C15/00 ; C03C25/06

Controlled thermal-oxidation thinning of polycrystalline silicon

Abstract:

A polycrystalline silicon fuse is formed to have a thickness below 1000 Angstroms by depositing a polycrystalline silicon layer to a thickness greater than 1200 Angstroms, oxidizing the polycrystalline silicon in a partially rich oxygen atmosphere to under 1000 Angstroms, removing the oxide layer over at least a sample fuse and measuring the thickness of the polycrystalline silicon.

Abstract(Chinese):

通过将多晶硅层沉积到大于1200埃的厚度，形成厚度低于1000埃的多晶硅熔丝，将部分富氧的氧气氛中的多晶硅氧化至1000埃以下，将至少一个氧化层除去氧化物层样品保险丝并测量多晶硅的厚度。

Public/Granted literature

US5772451A Sockets for electronic components and methods of connecting to electronic components Public/Granted day:1998-06-30

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）
H01L21/321	.......后处理