发明授权
- 专利标题: Making LSI devices with double level polysilicon structures
- 专利标题(中): 制造具有双层多晶硅结构的LSI器件
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申请号: US310337申请日: 1981-10-09
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公开(公告)号: US4458406A公开(公告)日: 1984-07-10
- 发明人: Francisco H. De La Moneda , Thomas A. Williams
- 申请人: Francisco H. De La Moneda , Thomas A. Williams
- 申请人地址: NY Armonk
- 专利权人: IBM Corporation
- 当前专利权人: IBM Corporation
- 当前专利权人地址: NY Armonk
- 主分类号: H01L23/528
- IPC分类号: H01L23/528 ; H01L21/225 ; H01L21/265 ; H01L21/28
摘要:
The high resistance of diffused electrical interconnection lines used for ground return paths in MOS field effect transistor (MOSFET) arrays limits their size and performance. Advantage is taken of the extra interconnection level available from conventional double-layer-polycrystalline silicon (polysilicon) processes to distribute ground potential to arrays, by means of a polycrystalline grid with direct contact to diffused electrodes therein, thus greatly reducing the deleterious effects of ground resistance. The proposed ground grid is integrated into the structure of a MOSFET ROM using a typical double polysilicon process. The first polysilicon level provides the conductive medium for said ground grid and the diffusing doping impurities that form contiguous source electrodes for the array MOSFETs. Gate electrodes thereof and word lines are formed out of the second polysilicon level. Drain electrodes are diffused and contacted by metallized output lines.
公开/授权文献
- US5003306A Apparatus for displaying current location 公开/授权日:1991-03-26