发明授权
- 专利标题: HgCdTe Bulk doping technique
- 专利标题(中): HgCdTe体掺杂技术
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申请号: US365135申请日: 1982-04-05
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公开(公告)号: US4462959A公开(公告)日: 1984-07-31
- 发明人: John H. Tregilgas
- 申请人: John H. Tregilgas
- 申请人地址: TX Dallas
- 专利权人: Texas Instruments
- 当前专利权人: Texas Instruments
- 当前专利权人地址: TX Dallas
- 主分类号: H01L21/385
- IPC分类号: H01L21/385 ; H01L31/0296 ; H01L31/18 ; H01L3/20
摘要:
Controllable doping of HgCdTe in concentrations low enough to be useful for electronic devices is accomplished by dissolving the desired dopant in mercury at or below the solubility limit. The mercury is then diluted with pure mercury, to lower the dopant concentration to that which will produce the desired impurity concentration in the end product. The doped mercury is then compounded according to conventional methods, to produce reproducibly doped HgCdTe of uniform composition.
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