发明授权
US4464587A Complementary IGFET Schmitt trigger logic circuit having a variable bias
voltage logic gate section
失效
具有可变偏置电压逻辑门极部分的互补IGFET施密特触发逻辑电路
- 专利标题： Complementary IGFET Schmitt trigger logic circuit having a variable bias voltage logic gate section
- 专利标题（中）： 具有可变偏置电压逻辑门极部分的互补IGFET施密特触发逻辑电路
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申请号： US295825申请日： 1981-08-24
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公开(公告)号： US4464587A公开(公告)日： 1984-08-07
- 发明人: Yasoji Suzuki , Kenji Matsuo
- 申请人： Yasoji Suzuki , Kenji Matsuo
- 申请人地址： JPX
- 专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人地址： JPX
- 优先权： JPX55-143320 19801014; JPX55-143324 19801014
- 主分类号： H03K3/3565
- IPC分类号： H03K3/3565 ; H03K3/037 ; H03K3/356 ; H03K19/094
摘要：
A logic gate section of a Schmitt trigger circuit has first and second nodes to which variable bias voltages are applied. A first bias control IGFET is connected between the first node and a first potential terminal. A second bias control IGFET is connected between the first node and a second potential terminal. A third bias control IGFET is connected between the second node and the first potential terminal. A fourth bias control IGFET is connected between the second node and the second potential terminal. A control signal to the gates of the first and fourth bias control IGFET's is provided by the Schmitt trigger input signal and the control signal to each of the gates of the third and fourth bias control IGFET's is provided by the Schmitt trigger feedback connection of two series-connected inverters.
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