发明授权
US4467341A Charge transfer imaging device with blooming overflow drain beneath
transfer channel
失效
电荷转移成像装置，在传输通道下面具有开花溢出漏极
- 专利标题： Charge transfer imaging device with blooming overflow drain beneath transfer channel
- 专利标题（中）： 电荷转移成像装置，在传输通道下面具有开花溢出漏极
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申请号： US461516申请日： 1983-01-27
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公开(公告)号： US4467341A公开(公告)日： 1984-08-21
- 发明人: Nobuo Suzuki
- 申请人： Nobuo Suzuki
- 申请人地址： JPX JPX
- 专利权人： Tokyo Shibaura Denki Kabushiki Kaisha,Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人： Tokyo Shibaura Denki Kabushiki Kaisha,Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人地址： JPX JPX
- 优先权： JPX57-20804 19820212
- 主分类号： H01L27/148
- IPC分类号： H01L27/148 ; H04N5/335 ; H04N5/341 ; H04N5/372 ; H01L29/78 ; H01L27/14 ; H01L31/00
摘要：
A charge trasfer imaging device is disclosed, which comprises photosensitive sites formed in and continuous to the surface of a semiconductor substrate for generating and storing signal charge in response to an incident light signal, a shift electrode for controlling the transfer of the signal charge through the semiconductor substrate, and a charge transfer shift register for reading out the signal charge by transferring the same from the shift electrode through transfer channels formed in and continuous to the semiconductor substrate surface. Semiconductor region of the opposite conductivity type to the semiconductor substrate is formed in the substrate other than a portion of the substrate below the photosensitive sites and at least under the transfer channels of the shift register, and a reverse bias voltage is applied between these semiconductor regions and the semiconductor substrate.
公开/授权文献
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