发明授权
- 专利标题: Integrated injection logic
- 专利标题(中): 集成注入逻辑
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申请号: US336275申请日: 1981-12-31
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公开(公告)号: US4470061A公开(公告)日: 1984-09-04
- 发明人: Masanori Nakai
- 申请人: Masanori Nakai
- 申请人地址: JPX
- 专利权人: Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人: Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人地址: JPX
- 优先权: JPX56-3630 19810113
- 主分类号: H01L27/082
- IPC分类号: H01L27/082 ; H01L21/331 ; H01L21/8226 ; H01L27/02 ; H01L29/73 ; H03K17/04 ; H03K19/013 ; H03K19/018 ; H03K19/091 ; H01L27/04
摘要:
An integrated injection logic having a first semiconductor region of first conductivity type, a second semiconductor region of second conductivity type formed in the first semiconductor region, a plurality of third semiconductor regions of first conductivity type formed in the second semiconductor region, and a fourth semiconductor region of second conductivity type formed in the first semiconductor region. A fifth semiconductor region of second conductivity type is formed in the first semiconductor region and in the vicinity of the second semiconductor region and is connected to one of the plurality of third semiconductor regions in order to eliminate minority carriers stored in the first semiconductor region and the second semiconductor region.
公开/授权文献
- US5744945A Cryogenic fluid-level sensor 公开/授权日:1998-04-28
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