发明授权
- 专利标题: Infrared sensitive photo diode
- 专利标题(中): 红外敏感光电二极管
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申请号: US386082申请日: 1982-06-07
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公开(公告)号: US4494133A公开(公告)日: 1985-01-15
- 发明人: Anthony B. Dean , Robin F. C. Farrow , Piero Migliorato , Anthony M. White , Gerald M. Williams
- 申请人: Anthony B. Dean , Robin F. C. Farrow , Piero Migliorato , Anthony M. White , Gerald M. Williams
- 申请人地址: GB2 London
- 专利权人: The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern Ireland
- 当前专利权人: The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern Ireland
- 当前专利权人地址: GB2 London
- 优先权: GBX8119440 19810623
- 主分类号: H01L31/10
- IPC分类号: H01L31/10 ; H01L27/14 ; H01L27/146
摘要:
A photo diode formed by a substrate of Cd.sub.x Hg.sub.1-x Te covered with a layer of CdTe forming a p-n junction. The substrate may be p-type in which case the layer is n-type or vice versa. An array of photo diodes may be formed by covering the substrate with semi-insulating CdTe and forming islets of In on the CdTe. Heating causes In to diffuse into the CdTe doping it n-type. This results in regions of n-type CdTe surrounded by semi-insulating CdTe each region forming, with the substrate, a photo diode. The heating also causes diffusion between the Cd.sub.x Hg.sub.1-x Te and CdTe to give a graded heterostructure. Electrical connections are made to the substrate, and each n-type region. The n-type CdTe region may alternatively be formed by molecular beam epitaxial growth techniques using a beam of In dopant.
公开/授权文献
- US5476718A Compound water-sealing sealant 公开/授权日:1995-12-19
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