Noise reduced photon detector
    1.
    发明授权
    Noise reduced photon detector 有权
    降噪光子探测器

    公开(公告)号:US06359283B1

    公开(公告)日:2002-03-19

    申请号:US09451111

    申请日:1999-11-30

    IPC分类号: G01T124

    摘要: A noise reduced photon detector incorporates an array (10) of semiconductor diode detector elements (12). Each element (12) has an extrinsic active layer (20) sandwiched between two layers (18, 22) of wider bandgap and mutually opposite conductivity type. These layers are in turn sandwiched between two further layers (16, 24) of wider bandgap than the active layer (20) and of higher doping than the other layers (18, 22). A mirror (34) extends round much the array (10) and isolates each element (12) from photons emitted by other elements (12). In operation the elements (12) are reverse biased and exhibit negative luminescence which reduces their photon emission. These two effects reduce unwanted photon generation and absorption, and consequently photon noise is also reduced.

    摘要翻译: 噪声降低的光子检测器包括半导体二极管检测器元件(12)的阵列(10)。 每个元件(12)具有夹在更宽带隙和相互相反导电类型的两层(18,22)之间的外在有源层(20)。 这些层又被夹在比有源层(20)更宽的带隙的两个另外的层(16,24)之间,并且比其它层(18,22)具有更高的掺杂。 反射镜(34)围绕阵列(10)延伸并且将每个元件(12)与由其它元件(12)发射的光子隔离。 在操作中,元件(12)被反向偏置并且表现出负的发光,这降低了它们的光子发射。 这两种效应减少了不必要的光子产生和吸收,因此光子噪声也降低了。

    Infra red detectors
    2.
    发明授权
    Infra red detectors 失效
    红外探测器

    公开(公告)号:US4679063A

    公开(公告)日:1987-07-07

    申请号:US534692

    申请日:1983-09-22

    申请人: Anthony M. White

    发明人: Anthony M. White

    CPC分类号: H01L31/1105 H01L31/101

    摘要: A detector in which a barrier region is interposed in the current path between the emitter and collector of the detector. This region is of a material having a valance band edge approximately level to that of the emitter material and an appreciably wider band gap. It thus serves to impede majority carrier current flow and as a consequence device resistance is high. When the detector is biased, the pedestal contribution to detector signal is low. The collector may be of semiconductor material of the same majority carried type as the emitter material; or may be of opposite type but dopant enriched; or it may be a Schottky metal contact. In one variant of the detector, the emitter and collector are located on opposite sides of the barrier and are of different bandgap materials. The infra red band response of this detector can be changed by reversing bias polarity. In another variant of the detector the emitter is in strip form and has a pair of bias contacts. The barrier and collector are located on the strip at a position between these contacts and provide a high resistance read-out structure. In one further variant of the detector the emitter, the collector, together with additional emitter-collector regions, are formed from a single layer of photosensitive material on one side of the barrier and provide a high resistance, series connected, multi-element structure.

    摘要翻译: 其中在检测器的发射极和集电极之间的电流路径中插入有阻挡区域的检测器。 该区域是具有与发射极材料的价带大致一致的价带边缘的材料和明显更宽的带隙。 因此,其用于阻止多数载流子电流流动,并且因此器件电阻较高。 当检测器偏置时,基座对检测器信号的贡献较低。 集电极可以是与发射极材料相同的多数承载类型的半导体材料; 或者可以是相反的类型但掺杂剂富集; 或者它可能是肖特基金属接触。 在检测器的一个变型中,发射极和集电极位于屏障的相对侧上并具有不同的带隙材料。 通过反转偏置极性可以改变该检测器的红外线响应。 在检测器的另一种变型中,发射器是带状形式并且具有一对偏置触点。 屏障和集电器位于这些触点之间的位置上,并提供高电阻读出结构。 在检测器的另一个变体中,发射极,集电极以及额外的发射极 - 集电极区域由阻挡层一侧上的单层感光材料形成,并提供高电阻,串联连接的多元件结构。

    Infrared sensitive photo diode
    3.
    发明授权
    Infrared sensitive photo diode 失效
    红外敏感光电二极管

    公开(公告)号:US4494133A

    公开(公告)日:1985-01-15

    申请号:US386082

    申请日:1982-06-07

    CPC分类号: H01L27/14649 H01L27/14692

    摘要: A photo diode formed by a substrate of Cd.sub.x Hg.sub.1-x Te covered with a layer of CdTe forming a p-n junction. The substrate may be p-type in which case the layer is n-type or vice versa. An array of photo diodes may be formed by covering the substrate with semi-insulating CdTe and forming islets of In on the CdTe. Heating causes In to diffuse into the CdTe doping it n-type. This results in regions of n-type CdTe surrounded by semi-insulating CdTe each region forming, with the substrate, a photo diode. The heating also causes diffusion between the Cd.sub.x Hg.sub.1-x Te and CdTe to give a graded heterostructure. Electrical connections are made to the substrate, and each n-type region. The n-type CdTe region may alternatively be formed by molecular beam epitaxial growth techniques using a beam of In dopant.

    摘要翻译: 由CdxHg1-xTe的衬底形成的光电二极管,其覆盖有形成p-n结的CdTe层。 衬底可以是p型,在这种情况下,该层为n型,反之亦然。 可以通过用半绝缘CdTe覆盖衬底并在CdTe上形成In的岛来形成光二极管阵列。 加热导致In扩散到CdTe掺杂n型。 这导致由半绝缘CdTe围绕的n型CdTe的区域,每个区域与衬底形成光电二极管。 加热也导致CdxHg1-xTe和CdTe之间的扩散,从而产生渐变异质结构。 电连接到基板和每个n型区域。 可以通过使用In掺杂剂的束的分子束外延生长技术来形成n型CdTe区域。

    Combination toe and side lasting machine
    4.
    发明授权
    Combination toe and side lasting machine 失效
    组合脚趾和侧面持久机

    公开(公告)号:US4407033A

    公开(公告)日:1983-10-04

    申请号:US332253

    申请日:1981-12-18

    摘要: A single-station combined toe and side lasting machine comprises pulling over instrumentalities 20, 22 for tensioning an upper over its last, toe lasting instrumentalities, including toe wipers 38, toe pad 48 and toe band 50, a heel support 56, two adhesive applying nozzles 28 and side lasting instrumentalities 114 constituted by two lasting rollers 176. In operation, with the upper tensioned, first the shoe is clamped by the toe lasting instrumentalities and heel support to allow adhesive to be applied progressively along opposite side portions from the toe to heel breast. Then the lasting rollers operate progressively from the ball region to the heel breast, and, when the rollers have cleared the ball region, the inwiping movement of the toe wipers is completed. The nozzles and side lasting rollers are mounted on a common carriage 26 which moved rectilinearly, supports 116 for the rollers being mounted for movement thereon about three perpendicular axes 82, 122, 140. The rollers are also supported by carriers 174 on said supports for pivotal movement about a further axis 170. In this way, the rollers can follow the contour of the shoe bottom and also the angular relationship of the rolers with the shoe bottom can be varied in two planes. For following the shoe bottom contour the rollers (and also, independently, the nozzled) are moved by stepping motors 80, 166 (96) in accordance with a program instruction, under the control of which also the angular relationship is varied. The carriers for the rollers also support wiping fingers 222 which ensure that the lasting margin of the upper is correctly positioned for engagement by the rollers.

    摘要翻译: 单台组合的脚趾和侧面持续机器包括拉出工具20,22,用于张紧其最后的鞋帮,持续的手段,包括脚趾擦拭器38,脚趾垫48和脚趾带50,脚跟支撑件56,两个粘合剂 喷嘴28和侧面保持工具114由两个持久辊176构成。在操作中,在上部张紧的状态下,第一鞋被脚趾持久的工具和鞋跟支撑夹紧,以允许粘合剂沿着与脚趾相对的侧部逐渐施加 脚跟乳房。 然后,持久的辊子从球区域到脚后跟乳房逐渐运行,并且当辊子已经清除球区域时,脚趾擦拭器的擦拭运动完成。 喷嘴和侧保持辊安装在公共滑架26上,公共滑架26直线运动,用于辊的支撑件116被安装成围绕三个垂直轴线82,122,140在其上运动。滚子还由所述支撑件上的托架174支撑以枢转 以这种方式,滚子可以跟随鞋底的轮廓,并且滚子与鞋底的角度关系也可以在两个平面中变化。 为了跟随鞋底轮廓,根据程序指令,滚子(以及独立地,喷嘴)由步进马达80,166(96)移动,在其控制下也可以改变角度关系。 用于辊的载体还支撑擦拭指状物222,其确保上部的持久边缘被正确定位以用于辊的接合。

    Transfer apparatus
    5.
    发明授权
    Transfer apparatus 失效
    转运设备

    公开(公告)号:US4599759A

    公开(公告)日:1986-07-15

    申请号:US615918

    申请日:1984-05-31

    摘要: The transfer apparatus comprises a transfer arm (16) and a distributor (18). The transfer arm has two axes of movement (22,26) and is non-extendable so that it moves between a take-off station and an intermediate station (I) through a fixed distance. The distributor (18) has a table (50) which receives a shoe (S) at the intermediate station (I). Furthermore, the table (50) can be positioned at any one of four stations (I,F1,F2,F3) each aligned with a channel (12) of a heat setting apparatus (14). A pneumatic control circuit causes shoes (S) fed successively to the table (50) to be transferred in a sequence to the channels (12) by operation of pusher means.The apparatus is suitable for transferring shoes from a lasting machine, a shoe support (10) of which can be positioned at the take-off station, to a heat setting apparatus (14).

    摘要翻译: 传送装置包括传送臂(16)和分配器(18)。 传送臂具有两个移动轴线(22,26),并且是不可延伸的,使得其在起飞站和中间站(I)之间移动一定距离。 分配器(18)具有在中间站(I)处接收鞋(S)的台(50)。 此外,台(50)可以位于与热定形装置(14)的通道(12)对准的四个站(I,F1,F2,F3)中的任一个处。 气动控制电路使连续送到工作台(50)的鞋(S)通过推动装置的操作依次传送到通道(12)。 该设备适用于将鞋子从持久机器转移到热定型设备(14)上,鞋子支架(10)可以位于起飞站。

    Infra red photo detector systems
    6.
    发明授权
    Infra red photo detector systems 失效
    红外光电探测器系统

    公开(公告)号:US4572953A

    公开(公告)日:1986-02-25

    申请号:US485888

    申请日:1983-04-18

    CPC分类号: H01L31/09 G01B11/00

    摘要: An infra red photo detector system comprises a piece of detector material, such as Cd.sub.x Hg.sub.1-x Te, InSb, InAs, etc, carrying at least a pair of spaced electrodes. An optical arrangement directs a small spot of radiation onto the detector. The position of the small spot on the much larger detector is found by applying an electrical bias between the electrodes causing a drift of photo carriers. The bias may be of alternating polarity and the detector output measured at each polarity. Alternatively a high frequency bias may be applied and the A.C. offset from the detector used to indicate spot position. Alternatively the spot position may be modulated or swept along the detector by a mirror moving in a sawtooth scanning action.

    摘要翻译: 红外光电检测器系统包括一块检测器材料,例如CdxHg1-xTe,InSb,InAs等,其携带至少一对隔开的电极。 光学装置将小的辐射点引导到检测器上。 通过在电极之间施加电偏压导致光载体的漂移,可以发现较大检测器上的小斑点的位置。 该偏压可以是交替极性,并且在每个极性处测量检测器输出。 或者,可以施加高频偏置,并且来自检测器的交流偏移用于指示光斑位置。 或者,斑点位置可以通过以锯齿扫描动作移动的反射镜沿检测器被调制或扫掠。

    Infrared detectors
    7.
    发明授权
    Infrared detectors 失效
    红外探测器

    公开(公告)号:US5248884A

    公开(公告)日:1993-09-28

    申请号:US700925

    申请日:1984-09-20

    摘要: An infrared detector comprises a thin film of photo-responsive material on transparent dielectric material with an array of planar antennae adjacent to the film surface. The antennae are separate from ohmic contacts arranged to connect the film to an external circuit. The antennae concentrate radiation in fringe fields at antenna edges and extremities interacting with the photo-responsive material. The detectors may be photovoltaic or photoconductive. The antennae may be rectangular, bow-tie, cruciform, elliptic, circular or square, and are dimensioned for resonance (preferably half-wavelength resonance) at frequencies within the photo-responsive material absorption band. Half-wavelength resonant antennae are best matched by F/0.7 optics. The detector may be a reticulated array. The dielectric material may be formed as a lens.

    摘要翻译: 红外检测器包括在透明电介质材料上的光响应材料薄膜,具有与膜表面相邻的平面天线阵列。 天线与被布置为将膜连接到外部电路的欧姆接触体分开。 天线将天线边缘和末端的边缘区域中的辐射集中在与光响应材料相互作用的位置。 检测器可以是光电或光电导。 天线可以是矩形,弓形,十字形,椭圆形,圆形或正方形,并且在光响应材料吸收带内的频率处的尺寸用于共振(优选为半波长共振)。 半波长谐振天线与F / 0.7光学器件最匹配。 检测器可以是网状阵列。 电介质材料可以形成为透镜。

    Multiple heterostructure photodetector
    8.
    发明授权
    Multiple heterostructure photodetector 失效
    多重结构光电转换器

    公开(公告)号:US5068524A

    公开(公告)日:1991-11-26

    申请号:US571587

    申请日:1990-08-23

    摘要: A photodetector (10) of the non-equilibrium kind incorporates three successively disposed sections (14, 16, 18) of like layer construction. Each of the sections (e.g. 14) contains three layers (14A, 14B, 14C) of semiconductor materials of the Cd.sub.x Hg.sub.1-x Te alloy system (CMT). The central layer (14B) of each section (14) is of narrow bandgap CMT, i.e. x=0.19 or 0.265 for absorption at 3-5 .mu.m or 8-12 .mu.m, and has very low doping (10.sup.15 cm.sup.-3) providing intrinsic conductivity. It is 1.5 .mu.m thick, less than one third of an optical absorption length. The outer layers of each section (14A, 14B) are 10 .mu.m thick and are of wide bandgap CMT, i.e. x=0.4. They have respective n and p type dopant concentrations of 3.times.10.sup.16 cm.sup.-3 providing extrinsic conductivity. Each central layer (14B) is therefore bounded by an excluding contact (14AB) and an extracting contact (14BC), which depress its carrier concentration to an extrinsic level under the action of electrical bias. This simulates cooling to low temperature. The central layers (14B to 18B) have a collective thickness (4.5 .mu.m) approaching an optical absorption length (6 .mu.m). A mirror (20) is arranged to return through the photodetector (10) radiation transmitted by it. This presents a total active region thickness six times that of an individual central region (14B) and greater than an optical absorption length. The photodetector (10) consequently has high quantum efficiency despite the deficiencies of n-type CMT material in this regard.

    摘要翻译: PCT No.PCT / GB89 / 01406 Sec。 371日期1990年8月23日第 102(e)1990年8月23日PCT PCT公布1989年11月24日PCT。 第WO90 / 06597号公报 日期:1990年6月14日。非平衡类型的光检测器(10)包含相似层结构的三个连续设置的部分(14,16,18)。 每个部分(例如14)包含CdxHg1-xTe合金系统(CMT)的半导体材料的三层(14A,14B,14C)。 每个部分(14)的中心层(14B)具有窄带隙CMT,即在3-5μm或8-12μm时吸收的x = 0.19或0.265,并且具有非常低的掺杂(1015cm-3) 提供内在的电导率。 厚度为1.5μm,小于光吸收长度的三分之一。 每个部分(14A,14B)的外层是10微米厚,并且具有宽带隙CMT,即x = 0.4。 它们具有各自的n和p型掺杂剂浓度为3×10 16 cm -3,提供外在电导率。 因此,每个中心层(14B)由排斥接触(14AB)和提取接触(14BC)限制,其在电偏压的作用下将其载流子浓度降低到外在水平。 这将模拟冷却至低温。 中心层(14B至18B)具有接近光学吸收长度(6μm)的总体厚度(4.5μm)。 反射镜(20)被布置成通过光电检测器(10)返回由其透射的辐射。 这提供了单个中心区域(14B)的六倍的总有源区厚度并且大于光吸收长度。 因此,尽管在这方面存在n型CMT材料的不足,光电检测器(10)具有高的量子效率。

    Infra red photo detector systems
    9.
    发明授权
    Infra red photo detector systems 失效
    红外光电探测器系统

    公开(公告)号:US4691107A

    公开(公告)日:1987-09-01

    申请号:US784469

    申请日:1985-10-04

    CPC分类号: H01L31/09 G01B11/00

    摘要: An infra red photo detector system comprises a piece of detector material, such as Cd.sub.x Hg.sub.1-x Te, InSb, InAs, etc, carrying at least a pair of spaced electrodes. An optical arrangement directs a small spot of radiation onto the detector. The position of the small spot on the much larger detector is found by applying an electrical bias between the electrodes causing a drift of photo carriers. The bias may be of alternating polarity and the detector output measured at each polarity. Alteratively a high frequency bias may be applied and the A.C. offset from the detector used to indicate spot position. Alternatively the spot position may be modulated or swept along the detector by a mirror moving in a sawtooth scanning action.

    Method of biasing a photoconductive detector and detector apparatus
therefor
    10.
    发明授权
    Method of biasing a photoconductive detector and detector apparatus therefor 失效
    偏置光导检测器及其检测器装置的方法

    公开(公告)号:US4535232A

    公开(公告)日:1985-08-13

    申请号:US441863

    申请日:1982-11-15

    摘要: It is a problem extracting the photosignal component from detector output, to the exclusion of pedestal bias response. To overcome this, a time varying bias signal is applied to each element of the detector. The duration of the time varying bias signal, or if a periodic signal, the signal period, is chosen as long compared to photocarrier lifetime and the signal amplitude is large enough to range over a non-linear portion of the responsivity characteristic of each element. The bias signal contains a d.c. component so that the bias signal ranges about a point of operation--a point of asymmetry lying on the responsivity characteristic. The photosignal component of the output signal may be removed by time averaging or by harmonic separation. Alternatively the bias signal may be modulated, and the photosignal component extracted by detection of demodulated signal.

    摘要翻译: 从检测器输出中提取光信号分量是排除基座偏置响应的问题。 为了克服这一点,对检测器的每个元件施加时变偏置信号。 时间偏移信号的持续时间,或者如果周期信号,信号周期,与光载流子寿命相比被选择为长,并且信号幅度足够大到在每个元件的响应特性的非线性部分上的范围。 偏置信号包含直流 使得偏置信号围绕操作点 - 位于响应特性上的不对称点。 可以通过时间平均或谐波分离来消除输出信号的光信号分量。 或者,可以调制偏置信号,并通过检测解调信号提取光信号分量。