A five-transistor CMOS static random-access memory cell which does not require a voltage on the address line higher than the supply voltage to effect writing, and so may be fabricated employing CMOS technology on a bulk single-crystal semiconductor substrate. The cell includes a latch comprising a complementary pair of IGFETs for actively storing one binary logic state. For storing the other binary logic state, there is only a single pull-up transistor connected to one data node and a high-impedance leakage current discharge path for the other data node. The cell also includes a pair of input/output gating transistors connected to the data nodes and operating in push-pull. Various forms of high impedance leakage current discharge path are disclosed, none of which require any increase in chip area. In one form, the high-impedance current discharge path comprises an IGFET having its gate tied to its drain terminal and having a channel extending between device regions which exist on the chip in any event for other purposes. In another form, a reverse-biased PN junction diode included in one of the gating transistors has sufficient conductivity to discharge leakage current to ground.