发明授权
- 专利标题： Method of manufacturing a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
-
申请号： US636221申请日： 1984-07-31
-
公开(公告)号： US4532004A公开(公告)日： 1985-07-30
- 发明人: Tatsuo Akiyama , Yutaka Koshino , Shunichi Hiraki
- 申请人： Tatsuo Akiyama , Yutaka Koshino , Shunichi Hiraki
- 申请人地址： JPX
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX
- 优先权： JPX58-140872 19830801
- 主分类号： H01L21/033
- IPC分类号： H01L21/033 ; H01L21/285 ; H01L21/338 ; H01L29/417 ; H01L29/80 ; H01L29/812 ; H01L21/306 ; B44C1/22 ; C03C15/00 ; C23F1/02
摘要：
A method of manufacturing a GaAs FET is disclosed. In this manufacturing method, a protection film is formed on a GaAs substrate and a dummy gate electrode is formed thereon. A channel length setting film is isotropically formed on the dummy gate electrode to have a constant thickness. Then, an impurity is ion-implanted in the channel length setting film. Thereafter, the channel length setting film is removed. An etching preventive film is anisotropically formed along a substantially vertical direction with respect to the GaAs substrate. The dummy gate electrode is etched using the etching preventive film as a mask so as to form a first opening in the etching preventive film. Then, a second opening is formed in the region of the protection film corresponding to the region in which the dummy gate electrode was present. A gate electrode is formed to be in contact with the GaAs substrate through the first and second openings.
公开/授权文献
信息查询
IPC分类:
