发明授权
- 专利标题: Single crystal growing of rare earth-gallium garnet
- 专利标题(中): 稀土镓石榴石的单晶生长
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申请号: US503837申请日: 1983-06-13
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公开(公告)号: US4534821A公开(公告)日: 1985-08-13
- 发明人: Susumu Sakaguchi , Ken Itoh , Masahiro Ogihara , Shinji Makigawa , Toshihiko Ryuo , Kazuyoshi Watanabe
- 申请人: Susumu Sakaguchi , Ken Itoh , Masahiro Ogihara , Shinji Makigawa , Toshihiko Ryuo , Kazuyoshi Watanabe
- 申请人地址: JPX Tokyo
- 专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX57-195703 19821108
- 主分类号: C30B15/00
- IPC分类号: C30B15/00 ; C30B29/28 ; C30B15/14
摘要:
An improvement in the Czochralski single crystal growing of a rare earth-gallium garnet such as gadolinium gallium garnet according to which the single crystal boules of a relatively large diameter and outstandingly free from any crystal defects and inclusions are readily obtained. The improved method comprises keeping the melt of the oxide mixture formed in an iridium crucible for at least 15 hours in the molten state before crystal growing is started. It was also shown that addition of certain additive gases, e.g. water vapor, carbon dioxide and oxygen, to the gaseous atmosphere mainly composed of, for example, nitrogen, in which crystal growing was performed, in a limited proportion was effective to further improve the crystal quality and to decrease the particulate inclusions in the single crystal boules.
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