A junction short-circuiting-type programmable read-only memory (PROM) device comprises a plurality of striped buried layers (12) and a plurality of striped collector regions (13) thereon. In each of the collector regions, a plurality of base regions (15-0.about.15-5) are disposed in a row, and in each of the base regions one emitter region (16-0.about.16-5) is disposed. Further, in each of the collector regions, a plurality of high impurity regions (17'-1.about.17'-3) of the same conductivity type as the collector region, are formed respectively connected to the word lines, while each base region is connected to one bit line. Each of the high impurity regions are arranged for every two base regions.