发明授权
- 专利标题： Method for fabricating semiconductor photodetector
- 专利标题（中）： 半导体光电探测器的制造方法
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申请号： US561103申请日： 1983-12-13
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公开(公告)号： US4536946A公开(公告)日： 1985-08-27
- 发明人: Junichi Nishizawa , Sobei Suzuki , Takashige Tamamushi
- 申请人： Junichi Nishizawa , Sobei Suzuki , Takashige Tamamushi
- 申请人地址： JPX
- 专利权人： Nishizawa; Junichi
- 当前专利权人： Nishizawa; Junichi
- 当前专利权人地址： JPX
- 优先权： JPX57-218591 19821213
- 主分类号： H01L27/146
- IPC分类号： H01L27/146 ; H01L29/10 ; H01L31/10 ; H01L21/22
摘要：
A semiconductor photodetector, and a process for producing a semiconductor photodetector, having a shielding gate region isolated from drain or source regions with only a small junction capacitance therebetween. The photodetector is implemented with a vertical static induction transistor. In the static induction transistor, a control gate region is formed on a first principal surface of a silicon wafer. The shielding gate region is formed on the principal surface surrounding the control gate region. At least one first principal electrode region is formed on the first principal surface between the control region and the shielding gate region. A second principal electrode region is formed on a second principal surface of the wafer on the side thereof opposite the first principal electrode region. The shielding gate region is formed in the silicon wafer at a position deeper than the first principal electrode region.
公开/授权文献
- US5083742A Fluid control valve 公开/授权日：1992-01-28
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