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公开(公告)号：US4725873A
公开(公告)日：1988-02-16
申请号：US882456
申请日：1986-07-08
IPC分类号： H01L27/146 , H04N5/335 , H04N5/359 , H01L27/14 , H04N3/14
CPC分类号： H01L27/14679
摘要： A semiconductor imaging device composed of a matrix of pixels, each pixel being implemented with a single static induction transistor. Each static induction transistor includes a pair of principal electrode regions disposed facing each other through a highly resistive channel region. First and second gate regions of the conduction type opposite that of the principal electrode regions is formed in contact with the channel region and used to control the current flow between the two principal electrode regions. A capacitor is formed on at least part of the first gate region, whereby carriers generated by light exitation are stored in the first gate region. The second gate region is formed surrounding the first gate region and is common to all pixels. This construction provides a high-level output signal and good isolation between pixels, with an attendant increase in blooming resistance.
摘要翻译： 由像素矩阵构成的半导体成像装置，每个像素由单个静态感应晶体管实现。 每个静态感应晶体管包括通过高电阻沟道区域彼此相对设置的一对主电极区域。 与主电极区域相反的导电类型的第一和第二栅极区域形成为与沟道区域接触，并用于控制两个主电极区域之间的电流。 在第一栅极区域的至少一部分上形成电容器，由此由光照射产生的载流子存储在第一栅极区域中。 第二栅极区域围绕第一栅极区域形成，并且对于所有像素是共同的。 这种结构提供了高电平输出信号和像素之间的良好隔离，伴随着起霜电阻的增加。
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公开(公告)号：US4536946A
公开(公告)日：1985-08-27
申请号：US561103
申请日：1983-12-13
IPC分类号： H01L27/146 , H01L29/10 , H01L31/10 , H01L21/22
CPC分类号： H01L27/14687 , H01L27/14603 , H01L27/14623 , H01L27/14679 , H01L29/1066
摘要： A semiconductor photodetector, and a process for producing a semiconductor photodetector, having a shielding gate region isolated from drain or source regions with only a small junction capacitance therebetween. The photodetector is implemented with a vertical static induction transistor. In the static induction transistor, a control gate region is formed on a first principal surface of a silicon wafer. The shielding gate region is formed on the principal surface surrounding the control gate region. At least one first principal electrode region is formed on the first principal surface between the control region and the shielding gate region. A second principal electrode region is formed on a second principal surface of the wafer on the side thereof opposite the first principal electrode region. The shielding gate region is formed in the silicon wafer at a position deeper than the first principal electrode region.
摘要翻译： 半导体光电检测器和半导体光电检测器的制造方法，其屏蔽栅极区域与漏极或源极区域隔离，其间仅具有小的结电容。 光电探测器用垂直静电感应晶体管实现。 在静电感应晶体管中，在硅晶片的第一主表面上形成控制栅极区域。 屏蔽栅极区域形成在围绕控制栅极区域的主表面上。 至少一个第一主电极区域形成在控制区域和屏蔽栅极区域之间的第一主表面上。 第二主电极区域形成在晶片的与第一主电极区域相对的一侧的第二主表面上。 屏蔽栅极区域形成在硅晶片的比第一主电极区域更深的位置处。
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公开(公告)号：US4719499A
公开(公告)日：1988-01-12
申请号：US882454
申请日：1986-07-08
CPC分类号： H01L27/14679
摘要： A semiconductor imaging device employing SIT (Static Induction Transistor) pixels having in the control gate region of each pixel a capacitor having optimum properties. Each pixel is constituted by an SIT having a pair of principal electrode regions of one conduction type facing one another through a highly resistive channel region. First and second gate regions of the other conduction type in contact with the channel region control the current flow between the two principal electrode regions. A transparent electrode is formed on at least part of the first gate region through a capacitor. Carriers generated by light excitation stored in the first gate region effectively control the current flow between the principal regions. A transparent electrically conductive layer is formed on the first gate region of each SIT through a nitride layer. The conductive layer serves as an electrode to connect the first gate region to the output of a gate control circuit.
摘要翻译： 一种使用SIT（静电感应晶体管）像素的半导体成像装置，其具有在每个像素的控制栅极区域中具有最佳特性的电容器。 每个像素由具有一对导电类型的一对主电极区域的SIT构成，通过高电阻沟道区域彼此相对。 与通道区域接触的另一导电类型的第一和第二栅极区域控制两个主电极区域之间的电流。 透明电极通过电容器形成在第一栅极区域的至少一部分上。 存储在第一栅极区域中的由光激发产生的载流子有效地控制主要区域之间的电流。 通过氮化物层在每个SIT的第一栅极区域上形成透明导电层。 导电层用作将第一栅极区域连接到栅极控制电路的输出的电极。
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4.发明授权Static induction transistor photodetector having a deep shielding gate region 失效具有深屏蔽栅极区域的静电感应晶体管光电探测器
公开(公告)号：US4684966A
公开(公告)日：1987-08-04
申请号：US745972
申请日：1985-07-16
IPC分类号： H01L27/146 , H01L29/10 , H01L31/10 , H01L29/80 , H01L27/14
CPC分类号： H01L27/14687 , H01L27/14603 , H01L27/14623 , H01L27/14679 , H01L29/1066
摘要： A semiconductor photodetector, and a process for producing a semiconductor photodetector, having a shielding gate region isolated from drain or source regions with only a small junction capacitance therebetween. The photodetector is implemented with a vertical static induction transistor. In the static induction transistor, a control gate region is formed on a first principal surface of a silicon wafer. The shielding gate region is formed on the principal surface surrounding the control gate region. At least one first principal electrode region is formed on the first principal surface between the control region and the shielding gate region. A second principal electrode region is formed on a second principal surface of the wafer on the side thereof opposite the first principal electrode region. The shielding gate region is formed in the silicon wafer at a position deeper than the first principal electrode region.
摘要翻译： 半导体光电检测器和半导体光电检测器的制造方法，其屏蔽栅极区域与漏极或源极区域隔离，其间仅具有小的结电容。 光电探测器用垂直静电感应晶体管实现。 在静电感应晶体管中，在硅晶片的第一主表面上形成控制栅极区域。 屏蔽栅极区域形成在围绕控制栅极区域的主表面上。 至少一个第一主电极区域形成在控制区域和屏蔽栅极区域之间的第一主表面上。 第二主电极区域形成在晶片的与第一主电极区域相对的一侧的第二主表面上。 屏蔽栅极区域形成在硅晶片的比第一主电极区域更深的位置处。
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公开(公告)号：US4571624A
公开(公告)日：1986-02-18
申请号：US561444
申请日：1983-12-14
IPC分类号： H01L27/146 , H04N5/335 , H04N3/12
CPC分类号： H04N3/1512
摘要： A two-dimensional solid-state image sensor device, comprising: a plurality of picture cells which are two-dimensionally arranged in column and row directions, and each of which comprises a static induction transistor having drain and source regions with one conductivity type which are disposed on opposite sides of a high resistance semiconductor channel region, and control and shielding gate regions with the other conductivity type which are adjacent to the channel region to control a current flowing between the drain and source regions, and a transparent electrode disposed via a capacitance on at least a portion of the control gate region, in a manner that light is incident through the transparent electrode to the control gate region in which the charge produced by the light excitation is stored to control the current; a plurality of selection lines, each of which connects the control gate regions in each column in common via the capacitances; and a plurality of signal readout lines, each of which connects the drain or source regions in each row in common. Each picture cell is selected in the column and row directions so that a signal is read out therefrom. The shielding gate regions are electrically connected in common in the column or row direction and electrically isolated in the remaining direction so that voltages are independently applied to the pixels.
摘要翻译： 一种二维固态图像传感器装置，包括：沿列和行方向二维排列的多个图像单元，每个图像单元包括具有一个导电类型的漏极和源极区的静态感应晶体管， 设置在高电阻半导体沟道区域的相对侧，以及与沟道区域相邻的具有另一导电类型的控制和屏蔽栅极区域，以控制在漏极和源极区域之间流动的电流，以及经由电容器设置的透明电极 在控制栅极区域的至少一部分上，以光通过透明电极入射到其中存储由光激发产生的电荷来控制电流的控制栅极区域; 多个选择线，其中每个选择线通过电容将每列中的控制栅极区域共同连接; 以及多个信号读取线，每条信号读出线共同连接每行的漏极或源极区域。 在列和行方向上选择每个图像单元，从而从其读出信号。 屏蔽栅极区域在列或行方向上共同电连接，并且在剩余方向上电隔离，使得电压独立地施加到像素。
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公开(公告)号：US4524391A
公开(公告)日：1985-06-18
申请号：US579644
申请日：1984-02-13
IPC分类号： H01L27/146 , H04N5/30 , H04N5/335 , H04N3/12
CPC分类号： H01L27/14679 , H04N5/30
摘要： A two-dimensional solid-state image sensor device comprising a plurality of picture cells two-dimensionally arranged in column and row directions. Each cell has a static induction transistor having drain and source regions disposed on opposite sides of a high resistance semiconductor channel region, and control and shielding gate regions adjacent to the channel region to control a current flowing between the drain and source regions, and a transparent electrode disposed via a capacitance on at least a portion of the control gate region, in a manner that light is incident through the transparent electrode to the control gate region in which the charge produced by the light excitation is stored to control the current. Selection lines and signal readout lines are connected to the control gate regions in each column in common via the capacitances and to the drain or source regions in each row in common, respectively. Each picture cell is selected in the column and row directions so that a signal is read out therefrom.
摘要翻译： 一种二维固态图像传感器装置，其包括在列和行方向上二维布置的多个图像单元。 每个单元具有静电感应晶体管，其具有设置在高电阻半导体沟道区域的相对侧上的漏极和源极区域，以及与沟道区域相邻的控制和屏蔽栅极区域，以控制在漏极和源极区域之间流动的电流，以及透明 电极，其通过在控制栅极区域的至少一部分上的电容设置，使得光通过透明电极入射到控制栅极区域，在该控制栅极区域存储由光激发产生的电荷以控制电流。 选择线和信号读出线分别经由电容和每行中的漏极或源极区域共同地连接到每列中的控制栅极区域。 在列和行方向上选择每个图像单元，从而从其读出信号。
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公开(公告)号：US4651015A
公开(公告)日：1987-03-17
申请号：US561242
申请日：1983-12-13
IPC分类号： H01L29/80 , H01L27/146 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/374 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14679
摘要： A semiconductor imaging device having a wide dynamic range to provide optimum output response characteristics under various illuminating conditions. The device includes a single SIT (Static Induction Transistor) which has a pair of principal electrode regions of one conduction type disposed facing one another through a channel region made of high resistivity semiconductor material. First and second gate regions of the other conduction type are formed in contact with the channel region to control the current flow between the two principal electrode regions. The second gate is common to all pixels. The potential at the second gate region is made variable by a variable power supply, a variable resistor connected between the second gate region and ground, a variable capacitor connected between the second gate region and ground, or combinations of these elements.
摘要翻译： 一种具有宽动态范围的半导体成像装置，以在各种照明条件下提供光电输出响应特性。 该器件包括单个SIT（静态感应晶体管），其具有通过由高电阻率半导体材料制成的沟道区域彼此相对设置的一对导电类型的主电极区域。 另一导电类型的第一和第二栅极区域形成为与沟道区域接触以控制两个主电极区域之间的电流。 第二个门是所有像素共同的。 通过可变电源，连接在第二栅极区域和地之间的可变电阻器，连接在第二栅极区域和地之间的可变电容器，或这些元件的组合，第二栅极区域上的电位可变。
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公开(公告)号：US4499654A
公开(公告)日：1985-02-19
申请号：US561120
申请日：1983-12-13
IPC分类号： H01L27/146 , H01L31/10 , H01L21/22 , H01L21/265
CPC分类号： H01L27/14692 , H01L27/14603 , H01L27/14679 , H01L27/14687
摘要： A method for forming a semiconductor photodetector array having a matrix of pixels, each constituted by a single SIT (Static Induction Transistor). A field oxide layer is formed on a first main surface of a silicon wafer. Portions of a field oxide layer are then removed from predetermined regions of the first main surface. In these predetermined regions are formed a control gate region and a shielding gate region, with the shielding gate region surrounding the control gate region. Oxide layers are formed on the control gate region and shielding gate region. Portions of the field oxide layer between the control gate region and shielding region are removed to partially expose the first main surface of the silicon wafer, and a first main electrode region is formed in the exposed portion. A first conductive electrode is then deposited on the first main region, whereupon the entirety of the first main surface of the silicon wafer is covered with a first insulating layer. Portions of the first insulating layer are then removed from the control gate region, and the entirety of the first main surface of the silicon wafer is covered with a second insulating layer. A second conductive electrode is then formed on the second insulating layer upon the control gate region. Portions of the first and second insulating layers and the oxide on the shielding gate region are removed to provide a contact hole. The first main surface of the silicon wafer is then covered with a metal layer, portions of which are subsequently removed from the control gate region. Finally, an electrode for the second main electrode region is deposited on the second main surface.
摘要翻译： 一种用于形成具有像素矩阵的半导体光电检测器阵列的方法，每个像素由单个SIT（静态感应晶体管）构成。 在硅晶片的第一主表面上形成场氧化物层。 然后从第一主表面的预定区域去除一部分场氧化物层。 在这些预定区域中形成控制栅极区域和屏蔽栅极区域，屏蔽栅极区域围绕控制栅极区域。 在控制栅极区域和屏蔽栅极区域上形成氧化物层。 除去控制栅极区域和屏蔽区域之间的场氧化物层的一部分以部分地暴露硅晶片的第一主表面，并且在暴露部分中形成第一主电极区域。 然后在第一主区域上沉积第一导电电极，于是硅晶片的第一主表面的整体被第一绝缘层覆盖。 然后从控制栅极区域去除第一绝缘层的部分，并且硅晶片的第一主表面的整体被第二绝缘层覆盖。 然后在控制栅区上在第二绝缘层上形成第二导电电极。 去除第一绝缘层和第二绝缘层的部分和屏蔽栅极区上的氧化物以提供接触孔。 然后用金属层覆盖硅晶片的第一主表面，随后将其部分部分从控制栅极区域移除。 最后，第二主电极区域的电极沉积在第二主表面上。
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公开(公告)号：US4502203A
公开(公告)日：1985-03-05
申请号：US561243
申请日：1983-12-13
IPC分类号： H01L27/146 , H01L31/10 , H01L21/22
CPC分类号： H01L27/14603 , H01L27/14623 , H01L27/14679 , H01L27/14687
摘要： A method for fabricating a photodetector device including a single pixel or an array of pixels, each of which is constituted by a single vertical type SIT (Static Induction Transistor). First and second main electrode regions are formed on respective first and second main surfaces of a silicon wafer. Control gate and shielding gate regions, as well as drain and source regions as well, are formed using a single common masking step. As a result, the formation of these regions is precisely controlled, resulting in superior photoresponse characteristics.
摘要翻译： 一种用于制造包括单个像素或像素阵列的光电检测器件的方法，每个像素由单个垂直型SIT（静态感应晶体管）构成。 第一和第二主电极区域形成在硅晶片的相应的第一和第二主表面上。 控制栅极和屏蔽栅极区以及漏极和源极区也使用单个公共掩模步骤形成。 结果，这些区域的形成被精确地控制，导致优异的光响应特性。
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公开(公告)号：US4719551A
公开(公告)日：1988-01-12
申请号：US879941
申请日：1986-06-30
CPC分类号： H02M7/53875
摘要： The present invention provides an optically controlled power converting apparatus using light trigger/light quench electrostatic induction thyristors, as switching elements, which can execute the switching operations at a high speed being when they are supplied with light trigger pulses and light quench pulses. By supplying the light trigger pulses and light quench pulses at the timings corresponding to the pulse width modulation, the light trigger/light quench electrostatic induction thyristors can perform predetermined power converting operations.
摘要翻译： 本发明提供了一种光控电力转换装置，其使用光触发/光骤冷静电感应晶闸管作为开关元件，其可以在被提供有光触发脉冲和光淬灭脉冲时以高速执行开关操作。 通过在对应于脉冲宽度调制的定时提供光触发脉冲和光淬灭脉冲，光触发/光淬火静电感应晶闸管可以执行预定的功率转换操作。
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