发明授权
US4538342A Forming platinum contacts to in-based group III-V compound devices
失效
与基于III-V族的复合器件形成铂触点
- 专利标题： Forming platinum contacts to in-based group III-V compound devices
- 专利标题（中）： 与基于III-V族的复合器件形成铂触点
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申请号： US621082申请日： 1984-06-15
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公开(公告)号： US4538342A公开(公告)日： 1985-09-03
- 发明人: Irfan Camlibel , Aland K. Chin , Brymer H. Chin , Christie L. Zipfel
- 申请人： Irfan Camlibel , Aland K. Chin , Brymer H. Chin , Christie L. Zipfel
- 申请人地址： NJ Murray Hill
- 专利权人： AT&T Bell Laboratories
- 当前专利权人： AT&T Bell Laboratories
- 当前专利权人地址： NJ Murray Hill
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/285 ; H01L29/43 ; H01L31/0224 ; H01L33/14 ; H01L33/30 ; H01L33/40
摘要：
Electrical contacts with low specific-contact resistance to In-based Group III-V compound semiconductors (e.g., p-InGaAsP) are formed by electron beam depositing a thin Pt layer directly on the semiconductor and sintering at about 450.degree.-525.degree. C. for about 5-30 minutes. Light emitting diodes without dark spot defects can be fabricated using this technique.
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