发明授权
- 专利标题: Chemical vapor deposition apparatus
- 专利标题(中): 化学气相沉积装置
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申请号: US528193申请日: 1983-08-31
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公开(公告)号: US4539933A公开(公告)日: 1985-09-10
- 发明人: Bryant A. Campbell , Dale R. DuBois , Ralph F. Manriquez , Nicholas E. Miller
- 申请人: Bryant A. Campbell , Dale R. DuBois , Ralph F. Manriquez , Nicholas E. Miller
- 申请人地址: CA San Jose
- 专利权人: Anicon, Inc.
- 当前专利权人: Anicon, Inc.
- 当前专利权人地址: CA San Jose
- 主分类号: C23C16/44
- IPC分类号: C23C16/44 ; C23C16/455 ; C23C16/48 ; H01L21/205 ; H01L21/285 ; C23C13/08
摘要:
An improved chemical vapor deposition device having heating means substantially surrounding an inner deposition chamber for providing isothermal or precisely controlled gradient temperature conditions therein. The internal components of the chamber are quartz or similar radiant energy transparent material. Also included are special cooling means to protect thermally sensitive seals, structural configurations strengthening areas of glass components subjected to severe stress during operation, and specific designs permitting easy removal and replacement of all glass components exposed to deposition gas.
公开/授权文献
- US5753279A Injection stretch blow molding apparatus 公开/授权日:1998-05-19
信息查询
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