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公开(公告)号：US4545327A
公开(公告)日：1985-10-08
申请号：US412237
申请日：1982-08-27
CPC分类号： C23C16/481 , Y10S505/819 , Y10S505/826
摘要： A chemical vapor deposition device having uniformly distributed heating means substantially surrounding an inner deposition reaction chamber for providing isothermal or precisely controlled gradient temperature conditions therein, the reaction chamber being surrounded by the walls of an outer vacuum chamber spaced therefrom.
摘要翻译： 一种具有均匀分布的加热装置的化学气相沉积装置，其基本上围绕内部沉积反应室，用于在其中提供等温或精确控制的梯度温度条件，所述反应室由与其间隔开的外部真空室的壁包围。
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公开(公告)号：US4641604A
公开(公告)日：1987-02-10
申请号：US804954
申请日：1985-12-05
申请人： Arthur J. Learn , Dale R. DuBois
发明人： Arthur J. Learn , Dale R. DuBois
IPC分类号： C23C16/44 , C23C16/455 , B05C13/02
CPC分类号： C23C16/45559 , C23C16/455 , C23C16/45591
摘要： A chemical vapor deposition wafer boat for supporting a plurality of wafers in an evenly spaced, upright orientation perpendicular to the axis of the boat comprises a cylinder having closed ends and comprised of mutually engaging upper and lower hemicylinders. The upper hemicylinder has diffusion zones with gas flow passageways therein in the ends and zones within from 0 to 75 and within from 0 to 15 degrees from a vertical plane through the cylinder axis. The remainder of the hemicylinder wall and the ends are baffle areas without gas flow passageways. The ends and sidewall of the lower hemicylinder comprise gas diffusion zones. The gas flow passageways comprise from 0.5 to 80 percent of the surface area of the respective gas diffusion zones.
摘要翻译： 用于以垂直于船的轴线的均匀间隔的垂直取向支撑多个晶片的化学气相沉积晶片舟皿包括具有封闭端并由相互接合的上下半筒组成的圆柱体。 上半圆柱体具有扩散区，其中在其中的气流通道在其内部，并且从垂直平面通过气缸轴线的0至75°和0至15度内的区域。 剩余的双缸壁和端部是没有气体流动通道的挡板区域。 下半圆柱体的端部和侧壁包括气体扩散区域。 气体流动通道占相应气体扩散区域的表面积的0.5％至80％。
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公开(公告)号：US4582020A
公开(公告)日：1986-04-15
申请号：US607065
申请日：1984-05-04
申请人： Arthur J. Learn , Dale R. DuBois
发明人： Arthur J. Learn , Dale R. DuBois
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , H01L21/205 , B05C13/02
CPC分类号： C23C16/45559 , C23C16/455 , C23C16/45591
摘要： A chemical vapor deposition wafer boat for supporting a plurality of wafers in an evenly spaced, upright orientation perpendicular to the axis of the boat comprises a cylinder having closed ends and comprised of mutually engaging upper and lower hemicylinders. The upper hemicylinder has diffusion zones with gas flow passageways therein in the ends and zones within from 0 to 75 and within from 0 to 15 degrees from a vertical plane through the cylinder axis. The remainder of the hemicylinder wall and the ends are baffle areas without gas flow passageways. The ends and sidewall of the lower hemicylinder comprise gas diffusion zones. The gas flow passageways comprise from 0.5 to 80 percent of the surface area of the respective gas diffusion zones.
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公开(公告)号：US4524719A
公开(公告)日：1985-06-25
申请号：US529415
申请日：1983-09-06
CPC分类号： C23C16/54 , C23C16/481 , Y10S414/141
摘要： A controlled temperature deposition device comprising an inner reaction chamber having gas distribution means for introducing gas into inner chamber and removing gas therefrom and a vacuum chamber means surrounding the inner deposition chamber and spaced from the walls thereof for maintaining a medium vacuum therein. Associated with the deposition device is a substrate loading and unloading fork which transfers substrates such as wafer boats from outside the device to a position in the inner deposition chamber and removes them from the inner deposition chamber following deposition.
摘要翻译： 一种控制温度沉积装置，包括具有气体分配装置的内部反应室，该气体分配装置用于将气体引入内部并从其中除去气体;以及真空室装置，围绕内部沉积室并与其间隔开并保持其中的真空。 与沉积装置相关联的是基板装载和卸载叉，其将诸如晶片舟皿的基板从装置的外部传送到内部沉积室中的位置，并且在沉积之后将其从内部沉积室中移出。
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5.发明授权Process and apparatus for low pressure chemical vapor deposition of refractory metal 失效难熔金属低压化学气相沉积工艺及装置
公开(公告)号：US4817557A
公开(公告)日：1989-04-04
申请号：US92967
申请日：1987-09-04
申请人： Michael Diem , Michael A. Fisk , Jon C. Goldman
发明人： Michael Diem , Michael A. Fisk , Jon C. Goldman
IPC分类号： C23C16/54 , H01L21/285 , C23C16/00
CPC分类号： C23C16/54 , H01L21/28556
摘要： A process and apparatus for the low pressure, cold wall, chemical vapor deposition of refractory metals, such as tungsten on a silicon wafer. The silicon wafer is introduced into a loading lock wherein the pressure is reduced to subatmospheric pressure. The silicon wafer is transferred to a deposition chamber where it is heated to an elevated temperature. A refractory metal carbonyl vapor is introduced into the deposition chamber and dissociates to deposit a refractory metal on the silicon wafer. The wafer is transferred to an unloading lock where it is allowed to cool and is then removed.
摘要翻译： 用于在硅晶片上的诸如钨的难熔金属的低压，冷壁，化学气相沉积的方法和装置。 将硅晶片引入装载锁中，其中压力降低至低于大气压。 将硅晶片转移到沉积室，在其中将其加热到升高的温度。 将难熔金属羰基蒸气引入沉积室中并解离以在硅晶片上沉积难熔金属。 将晶片转移到卸载锁上，在其中允许其冷却，然后将其移除。
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公开(公告)号：US4547404A
公开(公告)日：1985-10-15
申请号：US657313
申请日：1984-10-02
CPC分类号： C23C16/481
摘要： A chemical vapor deposition device having uniformly distributed heating means substantially surrounding an inner deposition reaction chamber for providing isothermal or precisely controlled gradient temperature conditions therein, the reaction chamber being surrounded by the walls of an outer vacuum chamber spaced therefrom.
摘要翻译： 一种具有均匀分布的加热装置的化学气相沉积装置，其基本上围绕内部沉积反应室，用于在其中提供等温或精确控制的梯度温度条件，所述反应室由与其间隔开的外部真空室的壁包围。
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公开(公告)号：US4539933A
公开(公告)日：1985-09-10
申请号：US528193
申请日：1983-08-31
IPC分类号： C23C16/44 , C23C16/455 , C23C16/48 , H01L21/205 , H01L21/285 , C23C13/08
CPC分类号： C23C16/481 , Y10S505/819 , Y10S505/826
摘要： An improved chemical vapor deposition device having heating means substantially surrounding an inner deposition chamber for providing isothermal or precisely controlled gradient temperature conditions therein. The internal components of the chamber are quartz or similar radiant energy transparent material. Also included are special cooling means to protect thermally sensitive seals, structural configurations strengthening areas of glass components subjected to severe stress during operation, and specific designs permitting easy removal and replacement of all glass components exposed to deposition gas.
摘要翻译： 一种改进的化学气相沉积装置，其具有基本上围绕内部沉积室的加热装置，用于在其中提供等温或精确控制的梯度温度条件。 室的内部部件是石英或类似的辐射能透明材料。 还包括用于保护热敏密封件的特殊冷却装置，在操作期间受到严重应力的玻璃部件的结构构造加强，以及允许容易地移除和更换暴露于沉积气体的所有玻璃部件的特定设计。
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8.发明授权Pulsewidth modulated pressure control system for chemical vapor deposition apparatus 失效用于化学气相沉积设备的脉宽调制压力控制系统
公开(公告)号：US4728869A
公开(公告)日：1988-03-01
申请号：US845212
申请日：1986-03-27
申请人： Noel H. Johnson , Gary C. Elliott
发明人： Noel H. Johnson , Gary C. Elliott
IPC分类号： C23C16/44 , C23C16/455 , C23C16/52 , G05D16/20 , H02P5/16
CPC分类号： C23C16/45557 , C23C16/4412 , C23C16/52 , G05D16/2066 , Y10S388/90 , Y10S388/91 , Y10S388/929 , Y10S388/933
摘要： A low pressure control system for chemical vapor deposition (CVD) apparatus, including a vacuum pressure chamber and an exhaust pump, is provided by a vacuum pump DC motor which is supplied power from a DC motor speed controller coupled to a DC control input signal from a pulsewidth modulation DC converter. The converter receives a single pulsewidth modulated pulse train having its percentage of modulation controlled in accordance with a DC to pulsewidth modulation controller which operates in accordance with the difference between a pair of DC input signals corresponding to the actual pressure inside the vacuum pressure chamber and a desired or set point pressure respectively. The vacuum pump motor speed and accordingly the exhaust pump is controlled with a high degree of precision, thereby providing improved coating uniformity of semiconductor wafers being fabricated by the CVD apparatus.
摘要翻译： 包括真空压力室和排气泵的化学气相沉积（CVD）装置的低压控制系统由真空泵直流电动机提供，该真空泵直流电动机由直流电动机速度控制器供电， 脉宽调制DC转换器。 转换器接收单个脉宽调制脉冲串，其脉宽调制百分比根据直流 - 脉冲宽度调制控制器控制，该脉冲宽度调制控制器根据与真空压力室内的实际压力相对应的一对直流输入信号之间的差异操作， 分别需要或设定点压力。 真空泵电机的转速以及相应的排气泵被高精度地控制，从而提供由CVD装置制造的半导体晶片的改进的涂层均匀性。
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公开(公告)号：US4720395A
公开(公告)日：1988-01-19
申请号：US899923
申请日：1986-08-25
申请人： Derrick W. Foster
发明人： Derrick W. Foster
CPC分类号： C23C16/345
摘要： Thermal CVD process for forming Si.sub.3 N.sub.4 -type films on substrates by reaction of gaseous NF.sub.3 with gaseous disilane at a temperature in the range of 250.degree.-500.degree. C., at pressures of 0.1-10 Torr. The mole ratio of NF.sub.3 to silane is in the range of 0.5-3.0 and the reaction zone is preferably isothermal (T controlled to within .sup.+ 5.degree. C.). The resulting films have RI's in the range of 1.4 to 3.0. The process parameters can be controlled to dope the film with H and/or F, or to create zones of differing properties within the film. The process does not cause radiation damage, metal migration, stored charge dissipation or high levels of impurities. Control of distance between adjacent wafers and wafer-to-wall spacing combined with laminar gas flow gives excellent film thickness uniformity, on the order of below about .+-.5% across the wafer face, both within (across) wafers and from wafer to wafer (batch uniformity).
摘要翻译： 通过气态NF3与气态乙硅烷在250〜-500℃的温度，0.1-10托的压力下反应形成Si3N4型薄膜的热CVD工艺。 NF3与硅烷的摩尔比在0.5-3.0的范围内，反应区优选是等温的（T控制在+ 5℃以内）。 所得膜的RI在1.4至3.0的范围内。 可以控制工艺参数以用H和/或F掺杂膜，或者在膜内产生不同性质的区域。 该过程不会造成辐射损伤，金属迁移，储存电荷耗散或杂质含量高。 控制相邻晶片之间的距离以及与层流气流相结合的晶圆间隔距离提供优异的薄膜厚度均匀性，在晶片表面内（跨越）晶圆和从晶圆到晶圆 晶圆（批量均匀）。
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公开(公告)号：US4694778A
公开(公告)日：1987-09-22
申请号：US828625
申请日：1986-02-10
申请人： Arthur J. Learn , Dale R. DuBois
发明人： Arthur J. Learn , Dale R. DuBois
IPC分类号： C23C16/44 , C23C16/455 , B05C13/02
CPC分类号： C23C16/45559 , C23C16/455 , C23C16/45591
摘要： A chemical vapor deposition wafer boat for supporting a plurality of wafers in an evenly spaced, upright orientation perpendicular to the axis of the boat comprises a cylinder having closed ends and comprised of mutually engaging upper and lower hemicylinders. The upper hemicylinder has diffusion zones with gas flow passageways therein in the ends and zones within from 0 to 75 and within from 0 to 15 degrees from a vertical plane through the cylinder axis. The remainder of the hemicylinder wall and the ends are baffle areas without gas flow passageways. The ends and sidewall of the lower hemicylinder comprise gas diffusion zones. The gas flow passageways comprise from 0.5 to 80 percent of the surface area of the respective gas diffusion zones.
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