发明授权
- 专利标题: Automatic plasma processing device and heat treatment device
- 专利标题(中): 自动等离子处理装置和热处理装置
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申请号: US424503申请日: 1982-09-27
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公开(公告)号: US4550239A公开(公告)日: 1985-10-29
- 发明人: Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
- 申请人: Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
- 申请人地址: JPX Kanagawa
- 专利权人: Tokyo Denshi Kagaku Kabushiki Kaisha
- 当前专利权人: Tokyo Denshi Kagaku Kabushiki Kaisha
- 当前专利权人地址: JPX Kanagawa
- 优先权: JPX56-159281 19811005; JPX57-148583 19820827
- 主分类号: B65G49/07
- IPC分类号: B65G49/07 ; H01L21/677 ; B23K9/00
摘要:
An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers can be simultaneously processed with plasma. The automatic plasma processing device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for taking out the wafers one by one from the cassette and for feeding the same, a holding frame for receiving the wafers one by one from the feeding mechanism and for holding the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The device is simplified in construction and can automatically and successively process a large number of wafers, while at the same time having a compact construction.
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