公开(公告)号：USD291413S

公开(公告)日：1987-08-18

申请号：US689661

申请日：1985-01-08

申请人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

设计人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

公开(公告)号：US4550239A

公开(公告)日：1985-10-29

申请号：US424503

申请日：1982-09-27

申请人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

发明人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

IPC分类号： B65G49/07 ,  H01L21/677 ,  B23K9/00

CPC分类号： H01L21/67778 ,  H01L21/67781 ,  Y10S156/912 ,  Y10S414/137 ,  Y10S414/14

摘要： An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers can be simultaneously processed with plasma. The automatic plasma processing device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for taking out the wafers one by one from the cassette and for feeding the same, a holding frame for receiving the wafers one by one from the feeding mechanism and for holding the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The device is simplified in construction and can automatically and successively process a large number of wafers, while at the same time having a compact construction.

摘要翻译： 一种具有基本上垂直设置的等离子体室的自动等离子体处理装置，其中多个半导体晶片可以与等离子体同时处理。 自动等离子体处理装置包括适于在其中容纳多个晶片的容器盒，用于从盒中一个接一个地取出晶片并用于馈送的馈送机构，用于从该盒子一个接一个地接收晶片的保持框架 进给机构并保持在其中的驱动机构，用于使保持框架上下移入等离子体室的驱动机构，用于在等离子体室中产生等离子体的等离子体产生机构，以及用于控制上述机构的控制系统。 该装置的结构简化，并且可以自动并连续地处理大量的晶片，同时具有紧凑的结构。

公开(公告)号：US4550242A

公开(公告)日：1985-10-29

申请号：US424287

申请日：1982-09-27

申请人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

发明人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

IPC分类号： H01L21/677 ,  B23K9/00

CPC分类号： H01L21/67781 ,  H01L21/67778 ,  Y10S156/912 ,  Y10S414/137

摘要： An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers are processed with plasma simultaneously. The device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for feeding the cassette to a predetermined position, a replacing mechanism for taking out the wafers from the cassette placed at the predetermined position, a holding frame operable to receive the wafers from the replacing mechanism and hold the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The automatic plasma processing device has a simplified construction and automatically and successively processes a large number of wafers, while at the same time being compact.

摘要翻译： 一种具有基本垂直设置的等离子体室的自动等离子体处理装置，其中多个半导体晶片同时被等离子体处理。 该装置包括适于在其中容纳多个晶片的容器盒，用于将盒子进给到预定位置的进给机构，用于从放置在预定位置的盒子取出晶片的替换机构，可操作以接收 来自替换机构的晶片并保持在其中，用于将保持框架上下移入和移出等离子体室的驱动机构，用于在等离子体室中产生等离子体的等离子体产生机构，以及用于控制 上述机制。 自动等离子体处理装置具有简化的结构，并且自动并连续地处理大量晶片，同时紧凑。

公开(公告)号：US4868096A

公开(公告)日：1989-09-19

申请号：US92485

申请日：1987-09-03

申请人： Muneo Nakayama ,  Akira Uehara ,  Akira Hashimoto ,  Toshihiro Nishimura ,  Isamu Hijikata ,  Mitsuaki Minato ,  Eiichi Kashiwagi

发明人： Muneo Nakayama ,  Akira Uehara ,  Akira Hashimoto ,  Toshihiro Nishimura ,  Isamu Hijikata ,  Mitsuaki Minato ,  Eiichi Kashiwagi

IPC分类号： G03F7/11

CPC分类号： G03F7/11

摘要： The adhesiveness of a silicone-based coating film on a substrate to an overcoating layer, e.g., a photoresist layer, can be improved without causing cracks when the silicone-based coating film is subjected to a plasma treatment at a temperature of 120.degree. C. or below in an atmosphere of a gas mainly composed of oxygen. Similar conditions of plasma treatment are applicable when patterning of a silicone-based coating film is desired in a procedure comprising the steps of forming a photoresist layer thereon, patterning of the photoresist layer in a photolithographic method, selectively etching the silicone-based coating film with the patterned resist layer serving as a mask and removing the photoresist layer by the plasma treatment.

摘要翻译： 当将硅氧烷基涂膜在120℃的温度下进行等离子体处理时，可以改善基材上的硅酮基涂膜与外涂层（例如光致抗蚀剂层）的粘附性，而不引起裂纹。 在主要由氧组成的气体的气氛中。 等离子体处理的类似条件适用于当在包括以下步骤的步骤中需要对硅氧烷基涂膜进行图案化的步骤时，在其上形成光致抗蚀剂层，以光刻方法对光刻胶层进行图案化，选择性地蚀刻硅氧烷基涂膜 图案化的抗蚀剂层用作掩模并通过等离子体处理去除光致抗蚀剂层。

公开(公告)号：US4749436A

公开(公告)日：1988-06-07

申请号：US79257

申请日：1987-07-29

申请人： Mitsuaki Minato ,  Isamu Hijikata ,  Akira Uehara ,  Muneo Nakayama

发明人： Mitsuaki Minato ,  Isamu Hijikata ,  Akira Uehara ,  Muneo Nakayama

IPC分类号： H01L21/027 ,  G03C5/00 ,  G03F7/20 ,  G03F7/38 ,  G03F7/40 ,  G07F7/00 ,  B44C1/22 ,  B29C37/00 ,  C03C15/00 ,  C03C25/06

CPC分类号： G03F7/2024 ,  Y10S438/948

摘要： An equipment (100; 200) for thermal stabilization process of photoresist pattern on semiconductor wafer comprises an ultraviolet lamp (20) by which a photoresist pattern formed on a semiconductor wafer (W) put in a process chamber (S) under vacuum pressure is irradiated with ultraviolet rays of a predetermined strength, and a heater (10) for heating the wafer to a predetermined temperature.

摘要翻译： 用于半导体晶片上的光致抗蚀剂图案的热稳定化处理的设备（100; 200）包括紫外线灯（20），其中在真空压力下放置在处理室（S）中的半导体晶片（W）上形成的光致抗蚀剂图案被照射 具有预定强度的紫外线，以及用于将晶片加热到预定温度的加热器（10）。

公开(公告)号：US4894254A

公开(公告)日：1990-01-16

申请号：US272083

申请日：1988-11-16

申请人： Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura ,  Akira Uehara ,  Isamu Hijikata

发明人： Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura ,  Akira Uehara ,  Isamu Hijikata

IPC分类号： B05D3/02 ,  B05D3/06 ,  B05D3/14 ,  B29C59/14 ,  C09D183/04 ,  G02F1/1337 ,  H01L21/312

CPC分类号： C08J7/123 ,  B05D3/145 ,  B29C59/14 ,  C09D183/04 ,  G02F1/133711 ,  H01L21/3121 ,  B05D2518/10 ,  B05D3/02 ,  C08J2383/04

摘要： A silicone film is formed by drying a solution coated on a substrate at a temperature below 150.degree. C. to form a silicone film on the substrate, treating the silicone film in an oxygen plasma, and heating the silicone film treated in the plasma at a temperature of 150.degree. C. or higher.

摘要翻译： 通过在低于150℃的温度下干燥涂覆在基材上的溶液来形成硅氧烷膜，以在基材上形成硅酮膜，在氧等离子体中处理硅酮膜，并加热在等离子体中处理的硅酮薄膜 温度为150℃以上。

公开(公告)号：US4578559A

公开(公告)日：1986-03-25

申请号：US649164

申请日：1984-09-10

申请人： Isamu Hijikata ,  Akira Uehara ,  Hisashi Nakane

发明人： Isamu Hijikata ,  Akira Uehara ,  Hisashi Nakane

IPC分类号： C23F4/00 ,  C03C15/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  B23K9/00 ,  H01L21/306

CPC分类号： H01J37/32431 ,  C03C15/00

摘要： A plasma etching method employing a parallel-plate type plasma etching device which comprises a reaction chamber, a substantially plate-like ground electrode and a substantially plate-like counter electrode both disposed in parallel with each other within the reaction chamber. The method includes the steps of placing a material to be etched on the ground electrode and carrying out an electric discharge with a spacing between the electrodes being substantially 3 to 10 mm. Etching is performed exactly at a high speed in an anisotropic form without requiring a high degree of vacuum.

摘要翻译： 使用平行板式等离子体蚀刻装置的等离子体蚀刻方法，其包括在反应室内彼此平行地设置的反应室，大致板状的接地电极和大致板状的对电极。 该方法包括以下步骤：将待蚀刻的材料放置在接地电极上，并执行电极间间隔大致为3至10mm的放电。 蚀刻完全以各向异性形式的高速完成，而不需要高度的真空度。

公开(公告)号：US4483651A

公开(公告)日：1984-11-20

申请号：US292417

申请日：1981-08-13

申请人： Hisashi Nakane ,  Akira Uehara ,  Shigekazu Miyazaki ,  Hiroyuki Kiyota ,  Isamu Hijikata

发明人： Hisashi Nakane ,  Akira Uehara ,  Shigekazu Miyazaki ,  Hiroyuki Kiyota ,  Isamu Hijikata

IPC分类号： H01L21/302 ,  B65G47/53 ,  B65G47/64 ,  B65G49/07 ,  H01L21/3065 ,  B65G47/24

CPC分类号： B65G47/54 ,  B65G47/643 ,  Y10S414/139

摘要： The invention provides a novel automatic apparatus for the continuous treatment of wafer materials, e.g. of silicon semiconductor, with gas plasma provided with a plural number of the gas plasma reaction chambers, transfer devices for bringing the wafer materials into and out of each of the reaction chambers and automatic control mechanism for controlling the individual parts of the apparatus in linkage operation. The transfer devices are composed of a main transfer conveyor extending in parallel with the array of the reaction chambers and over whole length of the array, a plural number of branched transfer conveyors each connecting one of the reaction chambers with the main transfer conveyor, a mechanism for transferring the wafer between the main transfer conveyor and one of the branched transfer conveyor and a mechanism for bringing the wafer material from the branched transfer conveyor to the gas plasma reaction chamber or vice versa. Transferring and gas plasma treatment of the wafer materials can be performed in continuous and successive linkage operations by virtue of the automatic control mechanism. The inventive apparatus is very advantageous in the continuous and concurrent handling of a plural number of wafer materials in the process of the gas plasma treatment so that excellent productivity of the process and highly uniform quality of the treated wafer materials are ensured.

摘要翻译： 本发明提供了一种用于连续处理晶片材料的新型自动装置，例如， 的硅半导体，其中具有多个气体等离子体反应室的气体等离子体，用于将晶片材料进出每个反应室的转移装置和用于在联动操作中控制装置的各个部件的自动控制机构 。 传送装置由与反应室的阵列平行延伸并且在整个长度上的主传送输送机组成，多个分支传送输送机将每个反应室中的一个连接到主传送输送机，一个机构 用于在主传送输送机和分支传送输送机之一之间传送晶片，以及用于将晶片材料从分支转移输送器引入气体等离子体反应室的机构，反之亦然。 可以通过自动控制机构在连续和连续的连动操作中进行晶片材料的转移和气体等离子体处理。 本发明的装置在气体等离子体处理过程中连续和同时处理多个晶片材料是非常有利的，因此确保了处理的优异的生产率和经过处理的晶片材料的高度均匀的质量。

公开(公告)号：US4465553A

公开(公告)日：1984-08-14

申请号：US551898

申请日：1983-11-15

申请人： Isamu Hijikata ,  Akira Uehara ,  Hisashi Nakane

发明人： Isamu Hijikata ,  Akira Uehara ,  Hisashi Nakane

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/3065 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137

摘要： The invention provides a method for fine pattern-wise etching of a surface layer on a substrate such as semiconductor silicon wafers in a dry process by use of a gaseous mixture of pentafluorochloroethane and sulfur hexafluoride as the etching gas to support the plasma atmosphere. The inventive method is advantageous in the compatibility of the requirements for a large etching rate and a high precision of the fine patterning in contrast to the generally accepted understanding that these two requirements are not compatible with each other since an etching gas having a high etching rate causes remarkable side etching to decrease the precision of the desired patterning.

摘要翻译： 本发明提供一种通过使用五氟氯乙烷和六氟化硫的气体混合物作为蚀刻气体在干法中在诸如半导体硅晶片的基板上精细图案化蚀刻表面层以支持等离子体气氛的方法。 本发明的方法在与蚀刻速率高的蚀刻气体之间相互不兼容的普遍接受的理解中，与蚀刻速率大的精度要求和高精度图案化的要求相兼容， 导致显着的侧面蚀刻以降低所需图案的精度。

公开(公告)号：US4318767A

公开(公告)日：1982-03-09

申请号：US208845

申请日：1980-11-20

申请人： Isamu Hijikata ,  Akira Uehara ,  Hisashi Nakane

发明人： Isamu Hijikata ,  Akira Uehara ,  Hisashi Nakane

IPC分类号： H01L21/302 ,  C23C14/56 ,  C23C16/54 ,  H01L21/3065 ,  H01L21/677 ,  C23F1/02

CPC分类号： H01L21/67748 ,  C23C14/566 ,  C23C16/54 ,  Y10S414/137 ,  Y10S414/139

摘要： An apparatus for the treatment of semiconductor wafers by plasma reaction is disclosed. The apparatus comprises a first wafer carrying means for a wafer to be treated, a reaction chamber, a second wafer carrying means for a treated wafer, and a control means for driving respective elements thereof in linkage motion. The first wafer carrying means has a first arm type wafer carrying means, which comprises a pair of guide rails, a pair of sliders mounted on the guide rails, respectively, and a pair of first arms for carrying the wafer to be treated. The reaction chamber is provided with a pair of slits for taking the wafer into and out of the reaction chamber, a pair of open-close type vacuum sealing devices mounted on the slits, respectively. Similarly, the second wafer carrying means has a second arm type wafer carrying means. The first and second wafer carrying means are preferably placed in a preliminary vacuum chamber, whereby a high vacuum in the reaction chamber can readily be obtained to be suitable for use in an etching device for aluminum wiring, and the like.

摘要翻译： 公开了一种通过等离子体反应处理半导体晶片的装置。 该装置包括用于待处理晶片的第一晶片承载装置，反应室，用于经处理的晶片的第二晶片承载装置，以及用于驱动其相应元件连动运动的控制装置。 第一晶片承载装置具有第一臂型晶片承载装置，其包括一对导轨，分别安装在导轨上的一对滑块和用于承载待处理晶片的一对第一臂。 反应室设有用于将晶片进出反应室的一对狭缝，分别安装在狭缝上的一对开 - 闭式真空密封装置。 类似地，第二晶片承载装置具有第二臂型晶片承载装置。 第一和第二晶片承载装置优选地放置在初级真空室中，由此可以容易地获得反应室中的高真空度，以适合用于铝布线的蚀刻装置等。