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17 条记录 (耗时 0.01 秒)

    Plasma taper etching for semiconductor device fabrication
    1.
    发明授权
    Plasma taper etching for semiconductor device fabrication 失效
    用于半导体器件制造的等离子体锥度蚀刻

    公开(公告)号：US5254214A

    公开(公告)日：1993-10-19

    申请号：US764428

    申请日：1991-09-23

    申请人： Isamu Hijikata ,  Kazutoshi Fujisawa

    发明人： Isamu Hijikata ,  Kazutoshi Fujisawa

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/00

    CPC分类号： H01L21/31051

    摘要： A plasma processing apparatus has a chamber which houses therein a plasma processing region and a plasma generating region spaced therefrom. An object such as a semiconductor wafer, which has surface irregularities including lands, is placed in the plasma processing region. When a plasma is generated in the plasma generating region with a processing gas composed mainly of an argon gas being introduced into the chamber, the corner edges of the lands of the object are etched into a taper shape, and the material etched away from the object is deposited between the lands.

    摘要翻译： 等离子体处理装置具有容纳等离子体处理区域和与其间隔开的等离子体产生区域的室。 诸如半导体晶片的具有包括焊盘的表面凹凸的物体被放置在等离子体处理区域中。 当在等离子体产生区域中产生等离子体的情况下，主要由氩气被引入室内的处理气体时，物体的焊盘的角部边缘被蚀刻成锥形，并且从物体上蚀刻的材料 沉积在土地之间。

    Plasma etching method
    3.
    发明授权
    Plasma etching method 失效
    等离子蚀刻法

    公开(公告)号：US4578559A

    公开(公告)日：1986-03-25

    申请号：US649164

    申请日：1984-09-10

    申请人： Isamu Hijikata ,  Akira Uehara ,  Hisashi Nakane

    发明人： Isamu Hijikata ,  Akira Uehara ,  Hisashi Nakane

    IPC分类号： C23F4/00 ,  C03C15/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  B23K9/00 ,  H01L21/306

    CPC分类号： H01J37/32431 ,  C03C15/00

    摘要： A plasma etching method employing a parallel-plate type plasma etching device which comprises a reaction chamber, a substantially plate-like ground electrode and a substantially plate-like counter electrode both disposed in parallel with each other within the reaction chamber. The method includes the steps of placing a material to be etched on the ground electrode and carrying out an electric discharge with a spacing between the electrodes being substantially 3 to 10 mm. Etching is performed exactly at a high speed in an anisotropic form without requiring a high degree of vacuum.

    摘要翻译： 使用平行板式等离子体蚀刻装置的等离子体蚀刻方法，其包括在反应室内彼此平行地设置的反应室，大致板状的接地电极和大致板状的对电极。 该方法包括以下步骤：将待蚀刻的材料放置在接地电极上，并执行电极间间隔大致为3至10mm的放电。 蚀刻完全以各向异性形式的高速完成，而不需要高度的真空度。

    Automatic plasma processing device and heat treatment device for batch treatment of workpieces
    4.
    发明授权
    Automatic plasma processing device and heat treatment device for batch treatment of workpieces 失效
    自动等离子处理装置和热处理装置，用于批量处理工件

    公开(公告)号：US4550242A

    公开(公告)日：1985-10-29

    申请号：US424287

    申请日：1982-09-27

    申请人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

    发明人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

    IPC分类号： H01L21/677 ,  B23K9/00

    CPC分类号： H01L21/67781 ,  H01L21/67778 ,  Y10S156/912 ,  Y10S414/137

    摘要： An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers are processed with plasma simultaneously. The device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for feeding the cassette to a predetermined position, a replacing mechanism for taking out the wafers from the cassette placed at the predetermined position, a holding frame operable to receive the wafers from the replacing mechanism and hold the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The automatic plasma processing device has a simplified construction and automatically and successively processes a large number of wafers, while at the same time being compact.

    摘要翻译： 一种具有基本垂直设置的等离子体室的自动等离子体处理装置，其中多个半导体晶片同时被等离子体处理。 该装置包括适于在其中容纳多个晶片的容器盒，用于将盒子进给到预定位置的进给机构，用于从放置在预定位置的盒子取出晶片的替换机构，可操作以接收 来自替换机构的晶片并保持在其中，用于将保持框架上下移入和移出等离子体室的驱动机构，用于在等离子体室中产生等离子体的等离子体产生机构，以及用于控制 上述机制。 自动等离子体处理装置具有简化的结构，并且自动并连续地处理大量晶片，同时紧凑。

    Object handling device
    5.
    发明授权
    Object handling device 失效
    对象处理装置

    公开(公告)号：US5083896A

    公开(公告)日：1992-01-28

    申请号：US406796

    申请日：1989-09-13

    申请人： Akira Uehara ,  Isamu Hijikata ,  Mitsuaki Minato

    发明人： Akira Uehara ,  Isamu Hijikata ,  Mitsuaki Minato

    IPC分类号： B25J9/06 ,  B25J9/04 ,  B25J21/00 ,  H01L21/677 ,  H01L21/687

    CPC分类号： H01L21/68707 ,  B25J21/005 ,  B25J9/042 ,  H01L21/67742 ,  Y10S414/135 ,  Y10T74/20207

    摘要： An object handling device successively transfers objects such as semiconductor wafers. The object handling device includes first and second collapsible arm units having hands for holding objects, a first drive shaft for selectively extending and contracting the first arm unit, a second drive shaft for selectively extending and contracting the second arm unit, a third drive shaft for turning the first and second arm units while keeping the first and second arm units in a relative positional relationship, the first, second, and third drive shafts being disposed coaxially with each other, and an actuator mechanism for angularly moving the first, second, and third drive shafts about their own axes independently of each other.

    摘要翻译： 物体处理装置连续地传送诸如半导体晶片的物体。 物体处理装置包括具有用于保持物体的手的第一和第二可折叠臂单元，用于选择性地延伸和收缩第一臂单元的第一驱动轴，用于选择性地延伸和收缩第二臂单元的第二驱动轴，用于 转动第一和第二臂单元，同时保持第一和第二臂单元处于相对位置关系，第一，第二和第三驱动轴彼此同轴设置;以及致动器机构，用于将第一和第二臂单元 第三驱动轴围绕它们自己的轴彼此独立。

    Surface treatment of silicone-based coating films
    6.
    发明授权
    Surface treatment of silicone-based coating films 失效
    硅胶涂层的表面处理

    公开(公告)号：US4868096A

    公开(公告)日：1989-09-19

    申请号：US92485

    申请日：1987-09-03

    申请人： Muneo Nakayama ,  Akira Uehara ,  Akira Hashimoto ,  Toshihiro Nishimura ,  Isamu Hijikata ,  Mitsuaki Minato ,  Eiichi Kashiwagi

    发明人： Muneo Nakayama ,  Akira Uehara ,  Akira Hashimoto ,  Toshihiro Nishimura ,  Isamu Hijikata ,  Mitsuaki Minato ,  Eiichi Kashiwagi

    IPC分类号： G03F7/11

    CPC分类号： G03F7/11

    摘要： The adhesiveness of a silicone-based coating film on a substrate to an overcoating layer, e.g., a photoresist layer, can be improved without causing cracks when the silicone-based coating film is subjected to a plasma treatment at a temperature of 120.degree. C. or below in an atmosphere of a gas mainly composed of oxygen. Similar conditions of plasma treatment are applicable when patterning of a silicone-based coating film is desired in a procedure comprising the steps of forming a photoresist layer thereon, patterning of the photoresist layer in a photolithographic method, selectively etching the silicone-based coating film with the patterned resist layer serving as a mask and removing the photoresist layer by the plasma treatment.

    摘要翻译： 当将硅氧烷基涂膜在120℃的温度下进行等离子体处理时，可以改善基材上的硅酮基涂膜与外涂层（例如光致抗蚀剂层）的粘附性，而不引起裂纹。 在主要由氧组成的气体的气氛中。 等离子体处理的类似条件适用于当在包括以下步骤的步骤中需要对硅氧烷基涂膜进行图案化的步骤时，在其上形成光致抗蚀剂层，以光刻方法对光刻胶层进行图案化，选择性地蚀刻硅氧烷基涂膜 图案化的抗蚀剂层用作掩模并通过等离子体处理去除光致抗蚀剂层。

    Automatic apparatus for continuous treatment of leaf materials with gas plasma
    8.
    发明授权
    Automatic apparatus for continuous treatment of leaf materials with gas plasma 失效
    用气体等离子体连续处理叶片材料的自动装置

    公开(公告)号：US4483651A

    公开(公告)日：1984-11-20

    申请号：US292417

    申请日：1981-08-13

    申请人： Hisashi Nakane ,  Akira Uehara ,  Shigekazu Miyazaki ,  Hiroyuki Kiyota ,  Isamu Hijikata

    发明人： Hisashi Nakane ,  Akira Uehara ,  Shigekazu Miyazaki ,  Hiroyuki Kiyota ,  Isamu Hijikata

    IPC分类号： H01L21/302 ,  B65G47/53 ,  B65G47/64 ,  B65G49/07 ,  H01L21/3065 ,  B65G47/24

    CPC分类号： B65G47/54 ,  B65G47/643 ,  Y10S414/139

    摘要： The invention provides a novel automatic apparatus for the continuous treatment of wafer materials, e.g. of silicon semiconductor, with gas plasma provided with a plural number of the gas plasma reaction chambers, transfer devices for bringing the wafer materials into and out of each of the reaction chambers and automatic control mechanism for controlling the individual parts of the apparatus in linkage operation. The transfer devices are composed of a main transfer conveyor extending in parallel with the array of the reaction chambers and over whole length of the array, a plural number of branched transfer conveyors each connecting one of the reaction chambers with the main transfer conveyor, a mechanism for transferring the wafer between the main transfer conveyor and one of the branched transfer conveyor and a mechanism for bringing the wafer material from the branched transfer conveyor to the gas plasma reaction chamber or vice versa. Transferring and gas plasma treatment of the wafer materials can be performed in continuous and successive linkage operations by virtue of the automatic control mechanism. The inventive apparatus is very advantageous in the continuous and concurrent handling of a plural number of wafer materials in the process of the gas plasma treatment so that excellent productivity of the process and highly uniform quality of the treated wafer materials are ensured.

    摘要翻译： 本发明提供了一种用于连续处理晶片材料的新型自动装置，例如， 的硅半导体，其中具有多个气体等离子体反应室的气体等离子体，用于将晶片材料进出每个反应室的转移装置和用于在联动操作中控制装置的各个部件的自动控制机构 。 传送装置由与反应室的阵列平行延伸并且在整个长度上的主传送输送机组成，多个分支传送输送机将每个反应室中的一个连接到主传送输送机，一个机构 用于在主传送输送机和分支传送输送机之一之间传送晶片，以及用于将晶片材料从分支转移输送器引入气体等离子体反应室的机构，反之亦然。 可以通过自动控制机构在连续和连续的连动操作中进行晶片材料的转移和气体等离子体处理。 本发明的装置在气体等离子体处理过程中连续和同时处理多个晶片材料是非常有利的，因此确保了处理的优异的生产率和经过处理的晶片材料的高度均匀的质量。