发明授权
- 专利标题： Method of fabricating magnetic bubble memory device
- 专利标题（中）： 制造磁性气泡记忆装置的方法
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申请号： US375180申请日： 1982-05-05
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公开(公告)号： US4556582A公开(公告)日： 1985-12-03
- 发明人: Ryo Imura , Tadashi Ikeda , Teruaki Takeuchi , Hiroshi Umezaki , Ryo Suzuki , Yutaka Sugita
- 申请人： Ryo Imura , Tadashi Ikeda , Teruaki Takeuchi , Hiroshi Umezaki , Ryo Suzuki , Yutaka Sugita
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX56-69440 19810511
- 主分类号： G11C11/14
- IPC分类号： G11C11/14 ; G11C19/08 ; H01F10/24 ; H01F41/14 ; H01F41/34 ; B05D3/06
摘要：
A method of fabricating a magnetic bubble memory device is disclosed in which ions are implanted in a desired portion of a surface region in a magnetic bubble film for magnetic bubbles to form a strain layer having a strain of about 1% to about 2.5%, a film is provided on the magnetic bubble film so as to cover the magnetic bubble film with the film and then the magnetic bubble film is annealed under predetermined conditions, thereby providing a practical magnetic bubble memory device having a large bias margin.
公开/授权文献
- US5049947A Rotating brush decision gate 公开/授权日：1991-09-17