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1.发明授权Method of making magnetic bubble memory device by implanting hydrogen ions and annealing 失效通过注入氢离子和退火制造磁性气泡存储器件的方法
公开(公告)号：US4460412A
公开(公告)日：1984-07-17
申请号：US367675
申请日：1982-04-12
申请人： Ryo Imura , Tadashi Ikeda , Ryo Suzuki , Nagatugu Koiso , Teruaki Takeuchi , Hiroshi Umezaki , Yutaka Sugita
发明人： Ryo Imura , Tadashi Ikeda , Ryo Suzuki , Nagatugu Koiso , Teruaki Takeuchi , Hiroshi Umezaki , Yutaka Sugita
IPC分类号： G11C11/14 , H01F10/24 , H01F41/14 , H01F41/32 , H01F41/34 , H01L21/265 , C04B35/00 , G11C19/08
摘要： A method of implanting a magnetic garnet film with ions is disclosed in which a covering film is provided on a monocrystalline magnetic garnet film for magnetic bubbles, and hydrogen ions are implanted in a desired portion of a surface region in the magnetic garnet film through the covering film. According to this method, it is possible to form an ion-implanted layer in which the ion concentration distribution in the direction of depth is uniform, and moreover the inplane anisotropy field in the ion-implanted layer decreases only a little with time in an annealing process.
摘要翻译： 公开了一种用离子注入磁性石榴石膜的方法，其中在用于磁性气泡的单晶磁性石榴石膜上提供覆盖膜，并且通过覆盖物将氢离子注入到磁性石榴石膜的表面区域的期望部分中 电影。 根据该方法，可以形成离子注入层，其中在深度方向上的离子浓度分布是均匀的，此外，离子注入层中的面内各向异性场在退火中仅随时间降低一点 处理。
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公开(公告)号：US4556582A
公开(公告)日：1985-12-03
申请号：US375180
申请日：1982-05-05
申请人： Ryo Imura , Tadashi Ikeda , Teruaki Takeuchi , Hiroshi Umezaki , Ryo Suzuki , Yutaka Sugita
发明人： Ryo Imura , Tadashi Ikeda , Teruaki Takeuchi , Hiroshi Umezaki , Ryo Suzuki , Yutaka Sugita
摘要： A method of fabricating a magnetic bubble memory device is disclosed in which ions are implanted in a desired portion of a surface region in a magnetic bubble film for magnetic bubbles to form a strain layer having a strain of about 1% to about 2.5%, a film is provided on the magnetic bubble film so as to cover the magnetic bubble film with the film and then the magnetic bubble film is annealed under predetermined conditions, thereby providing a practical magnetic bubble memory device having a large bias margin.
摘要翻译： 公开了一种制造磁性气泡存储装置的方法，其中将离子注入用于磁性气泡的磁性气泡膜的表面区域的期望部分中以形成具有约1％至约2.5％的应变的应变层， 在磁性气泡膜上设置膜以覆盖气泡膜，然后在预定条件下对磁性气泡膜进行退火，由此提供具有大的偏置裕度的实用的磁性气泡存储装置。
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公开(公告)号：US4476152A
公开(公告)日：1984-10-09
申请号：US465298
申请日：1983-02-09
申请人： Ryo Imura , Tadashi Ikeda , Norio Ohta , Teruaki Takeuchi , Yutaka Sugita
发明人： Ryo Imura , Tadashi Ikeda , Norio Ohta , Teruaki Takeuchi , Yutaka Sugita
CPC分类号： H01F41/34 , H01F41/14 , H01F41/186
摘要： Hydrogen ion is implanted twice or more at different acceleration voltages into desired portions of a magnetic film holding magnetic bubbles to form a magnetic bubble propagation path. This ensures production of an ion-implanted device having a sufficiently large anisotropic magnetic field parallel to the magnetic film and a high Curie temperature.
摘要翻译： 将氢离子在不同的加速电压下注入两次或更多次，以保持在保持磁性气泡的磁性膜的所需部分中以形成磁性气泡传播路径。 这确保了具有与磁性膜平行的足够大的各向异性磁场和高居里温度的离子注入装置的生产。
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公开(公告)号：US4556583A
公开(公告)日：1985-12-03
申请号：US375216
申请日：1982-05-05
申请人： Ryo Imura , Tadashi Ikeda , Teruaki Takeuchi , Norio Ohta , Yutaka Sugita
发明人： Ryo Imura , Tadashi Ikeda , Teruaki Takeuchi , Norio Ohta , Yutaka Sugita
摘要： A method of fabricating a magnetic bubble memory device is disclosed in which a desired portion of a surface region in a magnetic bubble film for magnetic bubbles is implanted with hydrogen ions with an ion dose of 2.5.times.10.sup.16 to 1.times.10.sup.17 cm.sup.-2, the surface of magnetic bubble film thus formed is covered with a film, and then the magnetic bubble film is annealed. According to this method, a reduction in propagation margin due to annealing is effectively prevented, and it is possible to form a magnetic bubble memory device of the contiguous disk type which is excellent in thermal stability.
摘要翻译： 公开了一种制造磁性气泡存储装置的方法，其中用于磁性气泡的磁性气泡膜中的表面区域的期望部分用离子剂量为2.5×10 16至1×10 17 cm -2的氢离子注入，磁性表面 由此形成的气泡膜被膜覆盖，然后使气泡膜退火。 根据该方法，有效地防止了由于退火导致的传播余量的降低，并且可以形成热稳定性优异的连续盘型的气泡存储装置。
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公开(公告)号：US4578775A
公开(公告)日：1986-03-25
申请号：US505379
申请日：1983-06-16
申请人： Ryo Suzuki , Yutaka Sugita , Teruaki Takeuchi , Naoki Kodama , Masatoshi Takeshita , Hiroshi Umezaki
发明人： Ryo Suzuki , Yutaka Sugita , Teruaki Takeuchi , Naoki Kodama , Masatoshi Takeshita , Hiroshi Umezaki
CPC分类号： G11C19/08 , G11C19/0891
摘要： A magnetic bubble memory device is disclosed which is equipped with a minor loop of a magnetic bubble propagation track formed by ion implantation and a major loop or major line of a magnetic bubble propagation track consisting of a soft magnetic film and in which the thickness of an insulating film at at least the junction between the minor loop and the major loop or major line is less than the thickness of insulating film at the major line or major loop.
摘要翻译： 公开了一种磁性气泡存储装置，其装备有通过离子注入形成的磁性气泡传播轨迹的小环和由软磁膜组成的磁性气泡传播轨迹的主要环或主线，其中， 至少在小环和主环或主线之间的连接处的绝缘膜小于主线或主环上的绝缘膜的厚度。
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公开(公告)号：US4584668A
公开(公告)日：1986-04-22
申请号：US603450
申请日：1984-04-24
申请人： Teruaki Takeuchi , Ryo Suzuki , Naoki Kodama , Masatoshi Takeshita , Tadashi Ikeda , Toshihiro Sato , Yutaka Sugita
发明人： Teruaki Takeuchi , Ryo Suzuki , Naoki Kodama , Masatoshi Takeshita , Tadashi Ikeda , Toshihiro Sato , Yutaka Sugita
IPC分类号： G11C19/08
CPC分类号： G11C19/08 , G11C19/0891
摘要： A magnetic bubble memory device has two types of magnetic bubble propagation tracks. One type of magnetic bubble propagation tracks are formed by implanting ions into a magnetic layer. The other are formed by a soft magnetic material, for example, a permalloy. At least the area where the soft magnetic material is located has a smaller thickness than the other area.
摘要翻译： 磁性气泡存储器件具有两种类型的气泡传播轨迹。 通过将离子注入到磁性层中形成一种类型的气泡传播轨迹。 另一种由软磁性材料，例如坡莫合金形成。 至少软磁性材料所在的区域的厚度比其他区域的厚度小。
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公开(公告)号：US4621344A
公开(公告)日：1986-11-04
申请号：US669427
申请日：1984-11-08
申请人： Toshihiro Sato , Ryo Suzuki , Tadashi Ikeda , Teruaki Takeuchi , Yutaka Sugita
发明人： Toshihiro Sato , Ryo Suzuki , Tadashi Ikeda , Teruaki Takeuchi , Yutaka Sugita
CPC分类号： G11C19/0816
摘要： A magnetic bubble device has minor loops formed through ion implantation and used for storing information. As the density becomes higher, inside turn corner portions are formed on the minor loops. Dummy patterns having circular, triangular or other shapes are disposed in the vicinity of the corner portion. It is desirable that the minimum distance X between the dummy pattern and the propagation track satisfy the relation of 1.5 D.ltoreq.X.ltoreq.3.5 D, where D represents the diameter of a bubble.
摘要翻译： 磁性气泡装置具有通过离子注入形成的较小的环，用于存储信息。 随着密度变高，在小环上形成内转角部。 具有圆形，三角形或其他形状的虚拟图案设置在角部附近。 期望虚拟图案和传播轨迹之间的最小距离X满足1.5D≤X≤3.5D的关系，其中D表示气泡的直径。
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8.发明授权
公开(公告)号：US4701385A
公开(公告)日：1987-10-20
申请号：US680891
申请日：1984-12-12
申请人： Ryo Imura , Tadashi Ikeda , Yutaka Sugita
发明人： Ryo Imura , Tadashi Ikeda , Yutaka Sugita
CPC分类号： G11C19/0808 , H01F41/22 , Y10S428/90
摘要： In a magnetic bubble device, a strain layer formed on the surface of a magnetic bubble garnet film by ion-implantation is required to have anisotropy field of great strength in the in-plane direction for driving magnetic bubbles. For preventing the effective anisotropy field change from being decreased by heat treatment, ion species having large mass and projected standard deviation not greater than 1000 .ANG. are implanted. The ion species are preferably selected from He to Kr in the periodic table. The heat treatment is effected at a temperature in a range of 450.degree. C. to 900.degree. C.
摘要翻译： 在气泡装置中，通过离子注入形成在石英石墨膜的表面上的应变层需要具有用于驱动磁性气泡的面内方向上的强度的各向异性场。 为了防止通过热处理而降低有效各向异性场的变化，植入具有大质量的离子种类和不超过1000安培的投影标准偏差。 离子种类优选选自周期表中的He至Kr。 热处理在450〜900℃的温度范围内进行。
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9.发明授权
公开(公告)号：US4894098A
公开(公告)日：1990-01-16
申请号：US225368
申请日：1988-07-28
申请人： Shigekazu Otomo , Noriyuki Kumasaka , Ryo Imura , Ryo Suzuki , Yutaka Sugita
发明人： Shigekazu Otomo , Noriyuki Kumasaka , Ryo Imura , Ryo Suzuki , Yutaka Sugita
CPC分类号： H01F41/18 , G11B5/1278 , G11B5/147 , G11B5/1878 , G11B5/21 , G11B5/31 , G11B5/3163 , Y10S148/90 , Y10T29/49034
摘要： Ion implantation is conducted in a desired area(s) of the surface of a magnetic layer, and annealing of the layer is carried out to control the composition in that desired area(s). The control of the composition may be facilitated by applying a one-directional or rotating magnetic field during ion implantation. In preparing a magnetic head, a portion of a magnetic pole at least on one side thereof in close proximity to a magnetic recording medium is formed into an iron or iron-based magnetic alloy film, at least part of which is subjected to ion implantation and annealing.
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10.发明授权
公开(公告)号：US4772976A
公开(公告)日：1988-09-20
申请号：US768965
申请日：1985-08-23
申请人： Shigekazu Otomo , Noriyuki Kumasaka , Ryo Imura , Ryo Suzuki , Yutaka Sugita
发明人： Shigekazu Otomo , Noriyuki Kumasaka , Ryo Imura , Ryo Suzuki , Yutaka Sugita
CPC分类号： H01F41/18 , G11B5/1278 , G11B5/147 , G11B5/1878 , G11B5/21 , G11B5/31 , G11B5/3163 , Y10S148/90 , Y10T29/49034
摘要： Ion implantation is conducted in a desired area(s) of the surface of a magnetic layer, and annealing of the layer is carried out to control the composition in that desired area(s). The control of the composition may be facilitated by applying a one-directional or rotating magnetic field during ion implantation. In preparing a magnetic head, a portion of a magnetic pole at least on one side thereof in close proximity to a magnetic recording medium is formed into an iron or iron-based magnetic alloy film, at least part of which is subjected to ion implantation and annealing.
摘要翻译： 在磁性层的表面的期望区域内进行离子注入，并且进行该层的退火以控制所需区域的组成。 可以通过在离子注入期间施加单向或旋转磁场来促进组合物的控制。 在制备磁头时，至少在磁记录介质附近的至少一侧的磁极的一部分形成为铁或铁基磁性合金膜，其至少一部分经受离子注入和 退火。
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