发明授权
US4561907A Process for forming low sheet resistance polysilicon having anisotropic
etch characteristics
失效
用于形成具有各向异性蚀刻特性的低片电阻多晶硅的方法
- 专利标题： Process for forming low sheet resistance polysilicon having anisotropic etch characteristics
- 专利标题（中）： 用于形成具有各向异性蚀刻特性的低片电阻多晶硅的方法
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申请号： US630091申请日： 1984-07-12
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公开(公告)号： US4561907A公开(公告)日： 1985-12-31
- 发明人: Bruha Raicu
- 申请人： Bruha Raicu
- 专利权人： Applied Materials Inc
- 当前专利权人： Applied Materials Inc
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/20 ; H01L21/265 ; H01L21/268 ; H01L21/28 ; H01L21/302 ; H01L21/3205 ; H01L21/3213 ; H01L21/324 ; H01L23/52
摘要：
A method for forming highly doped, low sheet resistance, anisotropically etched polysilicon using heat pulse annealing and plasma etching. The combination of low sheet resistance and anisotropic etch behavior is provided by heat pulse annealing for a time which corresponds to a characteristic transition region of the sheet resistance-annealing time curve.
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