-
公开(公告)号：US20200083452A1
公开(公告)日：2020-03-12
申请号：US15743614
申请日：2017-02-24
摘要： The present disclosure provides an apparatus (200) for vacuum processing of a substrate (10). The apparatus (200) includes a vacuum chamber, a first track arrangement (110) configured for transportation of a substrate carrier (120), a second track arrangement (130) configured for transportation of a mask carrier (140), and a holding arrangement configured for positioning the substrate carrier (120) and the mask carrier (140) with respect to each other. The first track arrangement (110) includes a first portion configured to support the substrate carrier (120) at a first end (12) of the substrate (10) and a second portion configured to support the substrate carrier (120) at a second end (14) of the substrate (10) opposite the first end (12) of the substrate (10). The second track arrangement (120) includes a further first portion configured to support the mask carrier (140) at a first end (22) of a mask (20) and a further second portion configured to support the mask carrier (140) at a second end (24) of the mask (20) opposite the first end (22) of the mask (20). A first distance (D) between the first portion and the second portion of the first track arrangement (110) and a second distance (D′) between the further first portion and the further second portion of the second track arrangement (130) are essentially the same.
-
2.发明申请公开(公告)号：US20200232088A1
公开(公告)日：2020-07-23
申请号：US15758837
申请日：2016-04-28
发明人： John M. WHITE , Oliver GRAW
IPC分类号： C23C14/35 , C23C14/24 , C23C14/34 , C23C14/56 , C23C16/54 , C23C14/50 , H01J37/34 , H01J37/32
摘要： The present disclosure provides an apparatus for vacuum deposition on a substrate. The apparatus includes a vacuum chamber having a first area and a first deposition area, one or more deposition sources at the first deposition area, wherein the one or more deposition sources are configured for vacuum deposition on at least a first substrate while the at least a first substrate is transported along a first transport direction past the one or more deposition sources, and a first substrate transport unit in the first area, wherein the first substrate transport unit is configured for moving the at least a first substrate within the first area in a first track switch direction, which is different from the first transport direction.
-
公开(公告)号：US20170067149A1
公开(公告)日：2017-03-09
申请号：US15118810
申请日：2014-02-21
发明人： Thomas DEPPISCH
CPC分类号： C23C14/5873 , C23C14/24 , C23C14/562 , C23C16/50 , C23C16/56 , H01J37/32082 , H01J2237/3321 , H01J2237/335
摘要： According to the present disclosure, a flexible substrate coating apparatus is provided. The flexible substrate coating apparatus includes a vacuum process chamber for processing a flexible substrate. The vacuum process chamber includes one or more deposition units and a cleaning unit positioned directly downstream of the one or more deposition units. In another aspect, a method for depositing a thin-film on a flexible substrate is provided. The method for depositing a thin-film on a flexible substrate includes vacuum coating of the flexible substrate, thereby depositing one or more layers on the flexible substrate, and cleaning the flexible substrate directly downstream of the coating.
摘要翻译： 根据本公开，提供了柔性基板涂布装置。 柔性基板涂布装置包括用于处理柔性基板的真空处理室。 真空处理室包括一个或多个沉积单元和位于该一个或多个沉积单元的直接下游的清洁单元。 另一方面，提供了一种在柔性基板上沉积薄膜的方法。 用于在柔性基板上沉积薄膜的方法包括真空涂覆柔性基底，从而在柔性基底上沉积一层或多层，以及直接在涂层的下游清洁柔性基底。
-
公开(公告)号：US20180351164A1
公开(公告)日：2018-12-06
申请号：US15570988
申请日：2015-05-15
发明人： Anke HELLMICH , Thomas Werner ZILBAUER , Jose Manuel DIEGUEZ-CAMPO , Stefan KELLER , Georg JOST
IPC分类号： H01M4/1395 , H01M4/04 , H01M4/38 , H01M4/40 , H01M10/052 , H01M6/40
CPC分类号： H01M4/1395 , H01M4/0423 , H01M4/0426 , H01M4/382 , H01M4/405 , H01M6/40 , H01M10/052 , H01M10/0585
摘要： The present disclosure provides a masking device for use in a lithium deposition process in the manufacturing of thin film batteries. The masking device includes a mask portion made of a metal or metal alloy, and one or more openings in the mask portion, wherein the one or more openings are configured to allow particles of a deposition material to pass through the mask portion, and wherein a size of each opening of the one or more openings, is at least 0.5 cm2.
-
公开(公告)号：US20170152968A1
公开(公告)日：2017-06-01
申请号：US15110714
申请日：2016-04-06
发明人： Govinda RAJ , Hanish KUMAR , Lin ZHANG , Stanley WU
IPC分类号： F16K41/10 , H01J37/32 , F16L11/15 , H01L21/687
CPC分类号： F16K41/10 , C23C16/4404 , F16L11/15 , H01J37/32477 , H01J37/32495 , H01L21/68757 , H01L21/68792
摘要： Implementations described herein protect a chamber components from corrosive cleaning gases used at high temperatures. In one embodiment, a chamber component includes at least a bellows that includes a top mounting flange coupled to a bottom mounting flange by a tubular accordion structure. A coating is disposed on an exterior surface of at least the tubular accordion structure. The coating includes of at least one of polytetrafluoroethylene, parylene C, parylene D, diamond-like carbon (DLC), yttria stabilized zirconia, nickel, alumina, or aluminum silicon magnesium yttrium oxygen compound. In one embodiment, the chamber component is a valve having an internal bellows.
-
公开(公告)号：US20160244870A1
公开(公告)日：2016-08-25
申请号：US15024001
申请日：2013-09-24
CPC分类号： C23C14/0042 , C23C14/544 , H01J37/32449 , H01J37/32981 , H01J37/3299
摘要： A method for controlling a gas supply to a process chamber is provided. The method includes: measuring a gas parameter by each of two or more sensors provided in the process chamber; determining a combined gas parameter from the measured gas parameters; and controlling the gas supply to the process chamber based on the determined combined gas parameter.
摘要翻译： 提供了一种用于控制对处理室的气体供应的方法。 该方法包括：通过设置在处理室中的两个或更多个传感器中的每一个测量气体参数; 根据测量的气体参数确定组合气体参数; 以及基于所确定的组合气体参数来控制对所述处理室的气体供应。
-
公开(公告)号：US20240363445A1
公开(公告)日：2024-10-31
申请号：US18140900
申请日：2023-04-28
CPC分类号： H01L22/12 , G06N20/00 , H01L24/80 , H01L2224/80895 , H01L2224/80896
摘要： In some embodiments, a method is provided that selects the thermal-mechanical three-dimensional properties of a dummy die for a bonding wafer based on obtaining a more homogeneous coefficient of thermal expansion or thermal conductivity control to alter heat extraction. In some embodiments, a method is provided that also selects properties and positioning of a dummy die based on subsequent processes that occur after bonding of dies to a bonding wafer. Placement of the dummy dies allows edge management control for chemical-mechanical polishing. In some embodiments, metrology feedback may be used to allow dummy die positioning based on non-functional dies bonded to a bonding wafer.
-
公开(公告)号：US20240363357A1
公开(公告)日：2024-10-31
申请号：US18631384
申请日：2024-04-10
发明人： David H. Collins , Nobuyuki Takahashi , Pin Hian Lee , Rio Soedibyo , Sanggil Bae , Houssam Lazkani , Songkram Sonny Srivathanakul , Raman Gaire , Gopal Bajaj
IPC分类号： H01L21/311 , H01L21/02 , H01L23/00
CPC分类号： H01L21/31105 , H01L21/0217 , H01L21/02274 , H01L23/562
摘要： Embodiments of the present technology may include semiconductor processing methods. The methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-containing precursor and a nitrogen-containing precursor. A substrate including one or more materials may be disposed within the processing region. The substrate may be characterized by a first bowing of the substrate. The methods may include generating plasma effluents of the deposition precursors. The methods may include forming a layer of silicon-and-nitrogen-containing material on the substrate. The layer of silicon-and-nitrogen-containing material may be characterized by a tensile stress. Subsequent forming the layer of silicon-and-nitrogen-containing material, the substrate may be characterized by a second bowing of the substrate that is less than the first bowing of the substrate.
-
公开(公告)号：US20240363348A1
公开(公告)日：2024-10-31
申请号：US18765888
申请日：2024-07-08
发明人： Karthik Narayanan BALAKRISHNAN , Jungrae PARK , Arunkumar TATTI , Sriskantharajah THIRUNAVUKARASU , Eng Sheng PEH
IPC分类号： H01L21/033 , B23K26/14 , B23K26/142 , B23K101/40 , H01L21/78
CPC分类号： H01L21/0337 , B23K26/142 , B23K26/1436 , B23K26/1437 , H01L21/78 , B23K2101/40
摘要： Methods and apparatus for laser patterning leverage mask trench debris removal techniques to form etch singulation trenches. In some embodiments, the method includes forming a mask layer on the wafer, forming a pattern in the mask layer using a laser of a laser assembly where the pattern allows singulation of the wafer by deep etching and forms a trench in the mask layer with a laser beam which has a process point at a bottom of the trench, directing gas nozzles that flow a pressurized gas at the process point in the trench as the pattern is formed with a gas flow angle relative to the process point and evacuating debris from the trench using an area of negative pressure where the gas flow from gas nozzles and the area of negative pressure are in fluid contact and are confined within a cylindrical housing.
-
公开(公告)号：US20240363337A1
公开(公告)日：2024-10-31
申请号：US18139699
申请日：2023-04-26
发明人： Muthukumar Kaliappan , Bo Xie , Shanshan Yao , Li-Qun Xia , Michael Haverty , Rui Lu , Xiaobo Li , Chi-I Lang , Shankar Venkataraman
IPC分类号： H01L21/02 , C23C16/32 , C23C16/455 , C23C16/56
CPC分类号： H01L21/02167 , C23C16/325 , C23C16/45542 , C23C16/45553 , C23C16/45565 , C23C16/56 , H01L21/02211 , H01L21/02274
摘要： Semiconductor processing methods are described for forming low-κ dielectric materials. The methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-carbon-and-hydrogen-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant of less than or about 4.0.
-
-
-
-
-
-
-
-
-
搜索结果
20435 条记录 (耗时 0.035 秒)
