发明授权
US4564773A Semiconductor gate array device having an improved interconnection
structure
失效
具有改进的互连结构的半导体门阵列器件
- 专利标题: Semiconductor gate array device having an improved interconnection structure
- 专利标题(中): 具有改进的互连结构的半导体门阵列器件
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申请号: US407148申请日: 1982-08-11
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公开(公告)号: US4564773A公开(公告)日: 1986-01-14
- 发明人: Tetsu Tanizawa , Hitoshi Omichi , Yoshiharu Mitono
- 申请人: Tetsu Tanizawa , Hitoshi Omichi , Yoshiharu Mitono
- 申请人地址: JPX Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX56-127072 19810813
- 主分类号: H01L21/822
- IPC分类号: H01L21/822 ; H01L21/82 ; H01L27/04 ; H01L27/118 ; H03K19/173 ; H03K19/177 ; H01L27/00 ; H03K19/003 ; H03K19/088
摘要:
In a semiconductor device having a gate array structure, a macro-cell includes more basic cells than conventional macro-cells, for preforming a logic function, whereby the density of the terminals in a direction vertical to a direction in which wiring lines are drawn, is decreased.
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