发明授权
- 专利标题： Rapid thermal annealing of silicon dioxide for reduced electron trapping
- 专利标题（中）： 快速热退火二氧化硅减少电子捕获
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申请号： US636042申请日： 1984-07-30
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公开(公告)号： US4566913A公开(公告)日： 1986-01-28
- 发明人: Marc H. Brodsky , Zeev A. Weinberg
- 申请人： Marc H. Brodsky , Zeev A. Weinberg
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L21/324
- IPC分类号： H01L21/324 ; H01L21/3105 ; H01L21/316 ; H01L21/263
摘要：
Silicon dioxide insulating films for integrated circuits are provided with enhanced electronic properties, including decreased water content and reduced trapping of electrons, by exposing a metal oxide semiconductor wafer including an exposed silicon dioxide layer, in an ambient of flowing inert gas, to heating radiation from a halogen lamp for a duration on the order of ten seconds to achieve annealing temperature in the range 600C.-800C.
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