发明授权
- 专利标题： Method of forming contact to thin film semiconductor device
- 专利标题（中）： 与薄膜半导体器件形成接触的方法
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申请号： US492675申请日： 1983-05-09
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公开(公告)号： US4570332A公开(公告)日： 1986-02-18
- 发明人: Yutaka Yamauchi
- 申请人： Yutaka Yamauchi
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX57-78851 19820510; JPX57-78852 19820510
- 主分类号： H01L27/01
- IPC分类号： H01L27/01 ; H01L27/142 ; H01L31/0224 ; H01L31/0392 ; H01L31/20 ; H01L21/28 ; H01L21/326 ; H01L31/18
摘要：
A method for making an electrode on a desired region of a thin film semiconductor layer having a junction therein and deposited on a conductive surface comprising the steps of applying an electrical pulse signal across the semiconductor layer at the desired region to lower the resistivity of the region and then forming an electrode film on the desired region of said semiconductor layer opposite said conductive surface, is disclosed. In one alternative embodiment, an electrode film is formed on the thin film semiconductor layer and thereafter an electrical pulse signal is applied across the semiconductor layer at the desired region to lower the resistivity of the region.
公开/授权文献
- US5042877A Arrangement of arm rest in automotive seat 公开/授权日：1991-08-27
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