发明授权
- 专利标题： Silicon nitride formation and use in self-aligned semiconductor device manufacturing method
- 专利标题（中）： 氮化硅形成和用于自对准半导体器件的制造方法
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申请号： US656182申请日： 1984-10-01
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公开(公告)号： US4575921A公开(公告)日： 1986-03-18
- 发明人: Jayant K. Bhagat
- 申请人： Jayant K. Bhagat
- 申请人地址： MI Detroit
- 专利权人： General Motors Corporation
- 当前专利权人： General Motors Corporation
- 当前专利权人地址： MI Detroit
- 主分类号： H01L21/033
- IPC分类号： H01L21/033 ; H01L21/311 ; H01L21/318 ; H01L21/265
摘要：
A method of forming a silicon nitride coating in situ on a silicon surface by ion milling. The ion milling and silicon nitride formation process are uniquely integrated in semiconductor manufacturing methods to provide several benefits, including contact areas being substantially registered with and self-aligned with functional regions.
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