发明授权
- 专利标题: Method of making thin free standing single crystal films
- 专利标题(中): 制备薄自立单晶膜的方法
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申请号: US604902申请日: 1984-04-27
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公开(公告)号: US4582559A公开(公告)日: 1986-04-15
- 发明人: Minas Tanielian , Robert E. Lajos , Scott Blackstone
- 申请人: Minas Tanielian , Robert E. Lajos , Scott Blackstone
- 申请人地址: IL Rolling Meadows
- 专利权人: Gould Inc.
- 当前专利权人: Gould Inc.
- 当前专利权人地址: IL Rolling Meadows
- 主分类号: C30B23/02
- IPC分类号: C30B23/02 ; C30B33/00 ; C30B1/00
摘要:
Thin free standing single crystal films can be produced by sputter depositing a layer of stressable metal onto a single crystal substrate, treating the composite so produced to effect stressing of the metal layer which then peels away with a portion of the single crystal substrate attached to the metal layer. The free standing film thus produced has typical thickness in the order of tens of micrometers. The metal layer can subsequently be removed by acid etching or other suitable etching techniques, to leave the free standing single crystal film, having a thickness from about 5 microns to about 50 or more.
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