公开(公告)号：US4582559A

公开(公告)日：1986-04-15

申请号：US604902

申请日：1984-04-27

申请人： Minas Tanielian ,  Robert E. Lajos ,  Scott Blackstone

发明人： Minas Tanielian ,  Robert E. Lajos ,  Scott Blackstone

IPC分类号： C30B23/02 ,  C30B33/00 ,  C30B1/00

CPC分类号： C30B29/06 ,  C30B23/02 ,  C30B33/00 ,  Y10S117/915

摘要： Thin free standing single crystal films can be produced by sputter depositing a layer of stressable metal onto a single crystal substrate, treating the composite so produced to effect stressing of the metal layer which then peels away with a portion of the single crystal substrate attached to the metal layer. The free standing film thus produced has typical thickness in the order of tens of micrometers. The metal layer can subsequently be removed by acid etching or other suitable etching techniques, to leave the free standing single crystal film, having a thickness from about 5 microns to about 50 or more.

摘要翻译： 可以通过在单晶衬底上溅射沉积可压应金属层来制造独立独立的薄膜，对所生产的复合材料进行处理以实现金属层的应力，然后将其与附着于该晶体的单晶衬底的一部分剥离 金属层。 这样制造的自立膜具有几十微米数量级的典型厚度。 随后可以通过酸蚀或其它合适的蚀刻技术去除金属层，以留下具有约5微米至约50或更大的厚度的自立式单晶膜。

公开(公告)号：US4526665A

公开(公告)日：1985-07-02

申请号：US642328

申请日：1984-08-20

申请人： Minas Tanielian ,  Scott Blackstone ,  Robert Lajos

发明人： Minas Tanielian ,  Scott Blackstone ,  Robert Lajos

IPC分类号： C23C14/54 ,  H01L21/28 ,  H01L21/285 ,  C23C15/00

CPC分类号： H01L21/28061 ,  C23C14/541 ,  H01L21/28518

摘要： The subject invention is a method of sputtering a material on a substrate in which the substrate is first locally heated so that the mobility on the surface of the substrate is increased to a value E.sub.s. A material is then sputtered on the substrate with a sputtering energy E.sub.k whereby the sum of E.sub.k and E.sub.s is greater than the activation energy required for a chemical reaction to occur between the sputtered surface of the substrate and the sputtered material. In the preferred embodiment, the substrate is silicon and the material to be sputtered is a refractory metal such as titanium.

摘要翻译： 本发明是在衬底上溅射材料的方法，其中首先局部加热衬底，使得衬底表面上的迁移率增加到值Es。 然后用溅射能量Ek将材料溅射在衬底上，由此Ek和Es的总和大于在衬底的溅射表面和溅射材料之间发生化学反应所需的活化能。 在优选实施例中，衬底是硅，并且要溅射的材料是诸如钛的难熔金属。

公开(公告)号：US20050045994A1

公开(公告)日：2005-03-03

申请号：US10952056

申请日：2004-09-28

申请人： Colin Gormley ,  Stephen Brown ,  Scott Blackstone

发明人： Colin Gormley ,  Stephen Brown ,  Scott Blackstone

IPC分类号： G02B26/08 ,  H01L21/00 ,  H01L21/20 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/46 ,  H01S5/02

CPC分类号： H01L21/3213 ,  G02B26/0833 ,  H01L21/311

摘要： A method for forming a multi-layer semiconductor device (1) having a lower silicon layer (4), an intermediate silicon layer (5) within which micro-mirrors (10) are formed and an upper spacer layer (6) of silicon for spacing another component from the micro-mirrors (10). First and second etch stop layers (8, 9) of oxide act as insulation between the respective layers (4, 5, 6). In order to minimise damage to the micro-mirrors (10), the formation of the micro-mirrors (10) is left to the end of the forming process. An assembly of the lower layer (4) and the intermediate layer (5) with the fist etch stop layer (8) is formed, and the second etch stop layer (9) is than grown and patterned on the intermediate layer (5) for subsequent formation of the micro-mirrors (10). The upper layer (5) is then bonded by an annealing process to the is patterned second etch stop layer (9). After the formation of communicating bores (30) in the lower layer (4) and thinning of the fist etch stop layer (8) adjacent the micro-mirrors (10) through the communicating bores (30), openings (16) in the upper layer (6) and the micro-mirrors (10) are sequentially formed by reactive ion etching through the upper layer (6). Portions of the first and second etch stop layers (8, 9) adjacent the micro-mirrors (10) am then etched away.

摘要翻译： 一种用于形成具有下硅层（4）的多层半导体器件（1），形成有微镜（10）的中间硅层（5）和用于硅的上间隔层（6）的多层半导体器件（1）的方法， 将另一组件与微反射镜（10）间隔开。 氧化物的第一和第二蚀刻停止层（8,9）用作各层（4,5,6）之间的绝缘体。 为了最小化对微反射镜（10）的损伤，微反射镜（10）的形成留在成型过程的结束。 形成具有第一蚀刻停止层（8）的下层（4）和中间层（5）的组件，并且第二蚀刻停止层（9）不在中间层（5）上生长和图案化，用于 随后形成微镜（10）。 然后通过退火工艺将上层（5）结合到图案化的第二蚀刻停止层（9）上。 在下层（4）中形成连通孔（30）并且通过连通孔（30）使靠近微反射镜（10）的第一蚀刻停止层（8）变薄，上部的开口（16） 层（6）和微反射镜（10）通过上层（6）的反应离子蚀刻顺序地形成。 邻近微反射镜（10）的第一和第二蚀刻停止层（8,9）的部分然后蚀刻掉。