发明授权
- 专利标题： Formation of conductive lines
- 专利标题（中）： 形成导线
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申请号： US710284申请日： 1985-03-11
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公开(公告)号： US4585515A公开(公告)日： 1986-04-29
- 发明人: Jer-shen Maa
- 申请人： Jer-shen Maa
- 申请人地址： NJ Princeton
- 专利权人： RCA Corporation
- 当前专利权人： RCA Corporation
- 当前专利权人地址： NJ Princeton
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/311 ; H01L21/768 ; H01L21/306 ; B44C1/22 ; C03C15/00 ; C23F1/02
摘要：
A process of forming conductive lines of fine dimensions over a substrate having topographical features without the formation of conductive stringers is disclosed. Openings of the desired dimensions overlying the topographical features are lithographically defined in a layer of planarizing dielectric material deposited on the substrate. A layer of doped silicon is deposited thereover and isotropically etched to remove all except for the portion in the openings in the dielectric layer. A layer of metal is deposited to overlie only the silicon in the openings in the dielectric layer. The structure is annealed to convert the metal to metal silicide and the remaining dielectric layer is removed.