发明授权
- 专利标题: Integratable circuit for controlling turn-off voltage rate-of-change of non-regenerative voltage-controlled switching semiconductor devices
- 专利标题(中): 用于控制非再生压控开关半导体器件的截止电压变化率的集成电路
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申请号: US604359申请日: 1984-04-27
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公开(公告)号: US4591734A公开(公告)日: 1986-05-27
- 发明人: William J. Laughton
- 申请人: William J. Laughton
- 申请人地址: NY Schenectady
- 专利权人: General Electric Company
- 当前专利权人: General Electric Company
- 当前专利权人地址: NY Schenectady
- 主分类号: H02M1/06
- IPC分类号: H02M1/06 ; H03K17/04 ; H03K17/042 ; H03K17/082 ; H03K17/567 ; H03K17/687 ; H03K4/94 ; H03K3/353 ; H03K17/284
摘要:
An integratable circuit for controlling the turn-off time-rate-of-voltage-change of a non-regenerative power switching device (such as a field-effect transistor, an insulated gate transistor and the like) uses a single capacitive element, in conjunction with a first current source, to provide a ramp voltage generator which is operative only if a ramp generator terminal is disconnected from a circuit common potential. The circuit uses a second current source and a controlled-conduction device to provide a control electrode drive signal to the at least one power switching device, controlling the flow of current through a load from a unipolarity or bipolarity source. The voltage across the controlled-conduction circuit of the power switching device then active is applied in attenuated form to another input of the ramp voltage generator to control the load voltage time-rate-of-change during load current turn-off.
公开/授权文献
- US5102248A Applicator for soft materials with tip forming means 公开/授权日:1992-04-07
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