发明授权
- 专利标题： Insulated gate-controlled thyristor
- 专利标题（中）： 绝缘栅控晶闸管
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申请号： US667845申请日： 1984-11-02
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公开(公告)号： US4630092A公开(公告)日： 1986-12-16
- 发明人: Jayant K. Bhagat
- 申请人： Jayant K. Bhagat
- 申请人地址： MI Detroit
- 专利权人： General Motors Corporation
- 当前专利权人： General Motors Corporation
- 当前专利权人地址： MI Detroit
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/10 ; H01L29/423 ; H01L29/745 ; H01L29/749 ; H01L29/72 ; H01L27/06 ; H01L29/08
摘要：
A new semiconductor power device, suitable for electrical switching in automotive applications, is proposed. This device combines the low specific on-resistance achievable with bipolar regenerative switching devices with the convenience of insulated gate control of not only turn-on but also turn-off. A device structure is presented that also includes a pinch resistance effect to more rapidly produce turn-off.
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