Invention Grant
- Patent Title: Method for the pretreatment of a substrate for ion implantation
- Patent Title (中): 离子注入用基板预处理方法
-
Application No.: US643034Application Date: 1984-08-21
-
Publication No.: US4636280APublication Date: 1987-01-13
- Inventor: Ryusuke Nakai , Toshihiko Takebe , Hajime Yamazaki
- Applicant: Ryusuke Nakai , Toshihiko Takebe , Hajime Yamazaki
- Applicant Address: JPX Osaka JPX Tokyo
- Assignee: Sumitomo Electric Ind., Ltd.,Nippon Telegraph & Telephone Public Corp.
- Current Assignee: Sumitomo Electric Ind., Ltd.,Nippon Telegraph & Telephone Public Corp.
- Current Assignee Address: JPX Osaka JPX Tokyo
- Priority: JPX58-154265 19830823
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L21/322 ; C30B1/02
Abstract:
An IC wafer with a uniform distribution of impurities is obtained by a pretreatment comprising annealing a semiconductor substrate at a high temperature for a long period of time and then cooling rapidly before IC processing.
Public/Granted literature
- US5851821A DNA Replication-regulating genes Public/Granted day:1998-12-22
Information query
IPC分类:
