公开(公告)号：US06741029B2

公开(公告)日：2004-05-25

申请号：US10112323

申请日：2002-03-28

申请人： Hideki Matsubara ,  Toshihiko Takebe ,  Hiroki Ishinaga ,  Mamoru Maegawa

发明人： Hideki Matsubara ,  Toshihiko Takebe ,  Hiroki Ishinaga ,  Mamoru Maegawa

IPC分类号： H01L3300

CPC分类号： H01L33/56 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0091 ,  Y10T428/24983 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emission apparatus includes: an electrode; a LED mounted on the electrode with an indium layer interposed therebetween, the LED having a substrate formed of an n-type ZnSe single crystal, and an epitaxial light emission structure formed of a compound crystal comprising ZnSe serving as a matrix, the epitaxial light emission structure being provided on the substrate and emitting light when an electric current is introduced thereinto; and resin encapsulating the LED, the resin having a glass transition temperature of lower than 80 degrees centigrade or being soft to be still elastic in a vicinity of the LED at room temperature.

摘要翻译： 发光装置包括：电极; 安装在电极上的LED，其间插入有铟层，LED具有由n型ZnSe单晶形成的衬底和由包含作为基体的ZnSe的复合晶体形成的外延发光结构，外延发光 结构设置在基板上，并且当引入电流时发射光; 以及在室温下封装LED的树脂，玻璃化转变温度低于80摄氏度或柔软而在LED附近仍然具有弹性。

公开(公告)号：US06642547B2

公开(公告)日：2003-11-04

申请号：US10114082

申请日：2002-04-01

申请人： Hideki Matsubara ,  Toshihiko Takebe ,  Hiroki Ishinaga ,  Mamoru Maegawa

发明人： Hideki Matsubara ,  Toshihiko Takebe ,  Hiroki Ishinaga ,  Mamoru Maegawa

IPC分类号： H01L2918

CPC分类号： H01L33/28 ,  H01L33/56 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L2924/00012 ,  H01L2924/00014

摘要： The present invention provide a light emitting device including: a resin base having a patterned interconnection; an n-type ZnSe substrate mounted on the resin base; an epitaxial light emission structure formed of a compound crystal relating to ZnSe serving as a matrix, formed on the ZnSe substrate and emitting light when an electric current is applied. A reflector is so constructed and positioned that a spatial distribution of the light emission intensity of the fluorescence light approximates the light emission intensity of the epitaxial light emission structure. The fluorescence light is produced in the ZnSe substrate excited by with the light emission from the epitaxial light emission structure.

摘要翻译： 本发明提供一种发光器件，包括：具有图案化互连的树脂基底; 安装在树脂基材上的n型ZnSe基板; 由与ZnSe基体相关的复合晶体形成的外延发光结构，形成在ZnSe基板上，并在施加电流时发光。 反射器的构造和定位使得荧光的发光强度的空间分布近似于外延发光结构的发光强度。 在由外延发光结构的发光激发的ZnSe衬底中产生荧光。

公开(公告)号：US06509651B1

公开(公告)日：2003-01-21

申请号：US09351323

申请日：1999-07-12

申请人： Hideki Matsubara ,  Toshihiko Takebe ,  Kensaku Motoki

发明人： Hideki Matsubara ,  Toshihiko Takebe ,  Kensaku Motoki

IPC分类号： H01L3300

CPC分类号： H01L33/08 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/00014

摘要： A substrate-fluorescent LED having a fluorescent-impurity doped substrate and an epitaxial emission structure including an active layer and being made on the substrate. The epitaxial emission structure emits blue or green light corresponding to the band gap of the active layer. The substrate absorbs a part of the blue or green light and makes fluorescence of a longer wavelength. Neutral color light or white light is emitted from the LED. The fluorescent substrate is n-AlGaAs(Si dope), GaP(Zn+O dope), ZnSe(Cu+I, Ag+I, Al+I dope), GaN(O.C.Va(N) dope) or so.

摘要翻译： 具有荧光杂质掺杂衬底的衬底荧光LED和包括有源层的外延发射结构，并且被制成在衬底上。 外延发射结构发射对应于有源层的带隙的蓝色或绿色光。 衬底吸收一部分蓝色或绿色光，并使荧光波长更长。 从LED发出中性色光或白光。 荧光基板是n-AlGaAs（Si掺杂），GaP（Zn + O掺杂），ZnSe（Cu + I，Ag + I，Al + I掺杂），GaN（O.C.Va（N）掺杂）等。

公开(公告)号：US06337536B1

公开(公告)日：2002-01-08

申请号：US09336764

申请日：1999-06-21

申请人： Hideki Matsubara ,  Koji Katayama ,  Toshihiko Takebe

发明人： Hideki Matsubara ,  Koji Katayama ,  Toshihiko Takebe

IPC分类号： H01L3300

CPC分类号： H01L33/08 ,  H01L33/20 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A white color or neutral color LED having an n-type ZnSe single crystal substrate doped with I, Cl, Br, Al, Ga or In as SA-emission centers and an epitaxial film structure including a ZnSe, ZnCdSe or ZnSeTe active layer and a pn-junction. The active layer emits blue or bluegreen light. The SA-emission centers in the ZnSe substrate convert blue or bluegreen light to yellow or orange SA-emission. The blue or bluegreen light from the epitaxial film structure and the yellow or orange light from the ZnSe substrate synthesize white color light or neutral color light between red and blue.

摘要翻译： 具有掺杂有I，Cl，Br，Al，Ga或In的n型ZnSe单晶衬底作为SA发射中心的白色或中性色LED以及包括ZnSe，ZnCdSe或ZnSeTe活性层的外延膜结构和 pn结。 有源层发出蓝色或蓝绿色光。 ZnSe衬底中的SA发射中心将蓝色或蓝绿光转换为黄色或橙色SA发射。 来自外延膜结构的蓝色或蓝绿色光以及来自ZnSe衬底的黄色或橙色光合成白色光或红色和蓝色之间的中性色光。

公开(公告)号：US4636280A

公开(公告)日：1987-01-13

申请号：US643034

申请日：1984-08-21

申请人： Ryusuke Nakai ,  Toshihiko Takebe ,  Hajime Yamazaki

发明人： Ryusuke Nakai ,  Toshihiko Takebe ,  Hajime Yamazaki

IPC分类号： H01L21/265 ,  H01L21/322 ,  C30B1/02

CPC分类号： H01L21/265 ,  H01L21/26546 ,  H01L21/3225

摘要： An IC wafer with a uniform distribution of impurities is obtained by a pretreatment comprising annealing a semiconductor substrate at a high temperature for a long period of time and then cooling rapidly before IC processing.

摘要翻译： 具有均匀杂质分布的IC晶片通过预处理获得，包括在高温下长时间退火半导体衬底，然后在IC处理之前快速冷却。