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    GaAs single crystal substrate and epitaxial wafer using the same
    2.
    发明授权
    GaAs single crystal substrate and epitaxial wafer using the same 有权
    GaAs单晶衬底和使用其的外延晶片

    公开(公告)号：US06180269B2

    公开(公告)日：2001-01-30

    申请号：US09334215

    申请日：1999-06-16

    Applicant: Yoshiaki Hagi ,  Ryusuke Nakai

    Inventor： Yoshiaki Hagi ,  Ryusuke Nakai

    IPC: B32B900

    CPC classification number: H01L21/0262 ,  C30B11/00 ,  C30B29/42 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  Y10T428/265

    Abstract: A GaAs single crystal substrate and an epitaxial wafer using the same suppress the generation of slips during growth of the epitaxial layer, and improve the breakdown withstanding characteristic of devices fabricated on such substrates. The GaAs single crystal substrate has a mean dislocation density in plane of at most 2×104 cm−2, a carbon concentration of 2.5 to 20.0×1015 cm−3, a boron concentration of 2.0 to 20.0×1016 cm−3, an impurity concentration other than carbon and boron of at most 1×1017 cm−3, an EL2 concentration of 5.0 to 10.0×1015 cm−3, resistivity of 1.0 to 5.0×108 &OHgr;·cm and a mean residual strain measured by photoelastic analysis of at most 1.0×10−5.

    Abstract translation: GaAs单晶衬底和使用其的外延晶片抑制外延层生长期间的滑移的产生，并且改善在这种衬底上制造的器件的击穿耐受特性。 GaAs单晶基板的平面位错密度为2×104cm-2以下，碳浓度为2.5〜20.0×10 15 cm -3，硼浓度为2.0〜20.0×10 16 cm -3，碳以外的杂质浓度 和至多1×10 17 cm -3的硼，EL 2浓度为5.0至10.0×10 15 cm -3，电阻率为1.0至5.0×10 8ΩEGA.cm，通过光弹性分析测量的平均残余应变为至多1.0×10 -5。

    CLEANING METHOD FOR FILTRATION MEMBRANE AND MEMBRANE FILTRATION APPARATUS
    3.
    发明申请
    CLEANING METHOD FOR FILTRATION MEMBRANE AND MEMBRANE FILTRATION APPARATUS 审中-公开
    用于过滤膜和膜过滤装置的清洁方法

    公开(公告)号：US20120074059A1

    公开(公告)日：2012-03-29

    申请号：US13242528

    申请日：2011-09-23

    Applicant: Shuji HAHAKURA ,  Hideki Kashihara ,  Satoshi Yahagi ,  Ryusuke Nakai

    Inventor： Shuji HAHAKURA ,  Hideki Kashihara ,  Satoshi Yahagi ,  Ryusuke Nakai

    IPC: B01D65/06 ,  B01D71/32 ,  B01D71/26

    CPC classification number: C02F1/44 ,  B01D65/02 ,  B01D2313/12 ,  B01D2321/04 ,  B01D2321/168 ,  B01D2321/185 ,  C02F1/441 ,  C02F1/444 ,  C02F2103/008 ,  C02F2103/08 ,  C02F2303/16

    Abstract: There is provided a cleaning method for a hydrophobic filtration membrane used for membrane filtration of water to be treated such as seawater, discharged water and ballast water including a jelly-like suspended substance and clogged with the suspended substance in the water to be treated, the filtration membrane being brought into contact with limonene-containing water, or backwashing of the filtration membrane with a cleaning liquid being done, and then, a flow having air taken therein being applied onto a surface of the filtration membrane or a water stream from an eductor nozzle being sprayed onto the filtration membrane. There is also provided a membrane filtration apparatus capable of efficiently performing the above-mentioned cleaning method.

    Abstract translation: 本发明提供一种用于对被处理水进行膜过滤的疏水性过滤膜的清洗方法，例如海水，排出水和包含果冻状悬浮物质的压载水，并将被悬浮物质堵塞在被处理水中， 过滤膜与含柠檬烯的水接触，或者用完成的清洗液对过滤膜进行反冲洗，然后将其中吸入的空气的流量施加到过滤膜的表面或来自喷射器的水流 喷嘴喷射到过滤膜上。 还提供了能够有效地进行上述清洗方法的膜过滤装置。

    BALLAST WATER TREATMENT APPARATUS AND BALLAST WATER TREATMENT METHOD
    5.
    发明申请
    BALLAST WATER TREATMENT APPARATUS AND BALLAST WATER TREATMENT METHOD 审中-公开
    压载水处理设备和压汞处理方法

    公开(公告)号：US20130319953A1

    公开(公告)日：2013-12-05

    申请号：US14000456

    申请日：2012-07-23

    Applicant: Isao Ozawa ,  Munetsugu Ueyama ,  Ryusuke Nakai

    Inventor： Isao Ozawa ,  Munetsugu Ueyama ,  Ryusuke Nakai

    IPC: C02F1/00

    CPC classification number: C02F1/00 ,  B01D29/21 ,  B01D29/54 ,  B01D29/6446 ,  B01D2201/583 ,  B63J4/002 ,  C02F1/004 ,  C02F2103/008

    Abstract: A ballast water treatment apparatus includes a filter that is cylindrically formed so as to surround an axis, a case that includes an outer cylindrical portion that is disposed so as to surround the filter, a rotation mechanism that rotates the filter around the axis, an untreated water nozzle that ejects untreated water to a filter-surrounding region that is defined by an outer peripheral surface of the filter and the outer cylindrical portion, a cleaning water nozzle that ejects cleaning water toward the outer peripheral surface of the filter, a filtered water channel through which filtered water that has passed through the filter flows from a region inside the filter to outside of the case, and a discharge channel through which discharged water that has not passed through the filter is discharged from the filter-surrounding region to outside of the case.

    Abstract translation: 一种压载水处理装置，包括以围绕轴线为圆筒状的过滤器，包括设置为围绕过滤器的外筒部的壳体，使过滤器绕轴线旋转的旋转机构，未处理 水喷嘴，其将未处理的水喷射到由过滤器的外周面和外筒部限定的过滤器周围区域;清洗水喷嘴，其向清洗器的外周面排出清洗水;过滤水通道 已通过过滤器的过滤水通过该过滤器从过滤器内部的区域流到壳体外部，并且未通过过滤器的排出水通过该排出通道从过滤器周围区域排出到外部 案件。

    Human Body Information Extraction Device, Human Body Imaging Information Reference Plane Conversion Method, and Cross Section Information Detection Device
    6.
    发明申请
    Human Body Information Extraction Device, Human Body Imaging Information Reference Plane Conversion Method, and Cross Section Information Detection Device 审中-公开
    人体信息提取装置，人体成像信息参考平面转换方法和横截面信息检测装置

    公开(公告)号：US20090123892A1

    公开(公告)日：2009-05-14

    申请号：US11663634

    申请日：2005-09-26

    Applicant: Motofumi SOGO ,  Yoshihisa SOMEKAWA ,  Ryusuke NAKAI

    Inventor： Motofumi SOGO ,  Yoshihisa SOMEKAWA ,  Ryusuke NAKAI

    IPC: A61C11/00 ,  A61B5/05

    CPC classification number: A61B6/5217 ,  A61B6/032 ,  A61B6/14 ,  A61B6/145 ,  A61B6/5223 ,  A61C11/00 ,  A61C19/05 ,  G06K9/32 ,  G06K2209/05 ,  G06T7/75 ,  G06T19/00 ,  G06T2207/10081 ,  G06T2207/30036 ,  G06T2210/41

    Abstract: There is provided a human body information extraction device for extracting human body information including position information from a reference position, from 3D information on the human body elements obtained from a CT information or the like in which the position information from the reference position with respect to a human body element is unknown. In the human body information extraction device, a reference plane for positioning is detected by detecting information on a common positioning member contained in both of the 3D human body information from the CT information and a 3D model information from a human body model. The both reference planes are matched on the display so that the 3D human body information is positioned on the reference plane. Furthermore, only human information corresponding to the 3D model information is extracted from the CT information. By using this device, it is possible to obtain 3D human body information positioned on the reference plane from which a noise is excluded.

    Abstract translation: 提供了一种人体信息提取装置，用于从根据CT信息等获得的人体元素的3D信息，从参考位置提取包括位置信息的人体信息，其中来自参考位置的位置信息相对于 一个人体元素是未知的。 在人体信息提取装置中，通过检测来自CT信息的3D人体信息中包含的公共定位构件的信息和来自人体模型的3D模型信息来检测用于定位的参考平面。 两个参考平面在显示器上匹配，使得3D人体信息位于参考平面上。 此外，仅从CT信息中提取与3D模型信息对应的人类信息。 通过使用该装置，可以获得定位在噪声被排除的参考平面上的3D人体信息。

    Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth
    7.
    发明授权
    Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth 失效
    用于生长化合物半导体的外延和用于外延生长的InP衬底

    公开(公告)号：US5647917A

    公开(公告)日：1997-07-15

    申请号：US525423

    申请日：1995-09-07

    Applicant: Kazuhiko Oida ,  Ryusuke Nakai

    Inventor： Kazuhiko Oida ,  Ryusuke Nakai

    IPC: C30B25/18 ,  C30B23/02 ,  C30B25/02 ,  C30B29/40 ,  H01L21/205 ,  H01L29/12

    CPC classification number: C30B23/02 ,  C30B25/02 ,  C30B29/40 ,  Y10S117/902

    Abstract: When compound semiconductor films are grown on an InP wafer having a surface near a (100) orientation hillocks tend to arise on the films. Off-angle wafers have been adopted for substrates in order to suppress the occurrence of hillocks. The off-angle .THETA. from a (100) plane, however, is not the sole factor for determing wheather hillocks will be formed on the film. There is a concealed parameter which determines the generation of hillocks. What induces hillocks on the growing film are the defects on the substrate itself. No hillocks originate on portions of the film that correspond to the portions of the InP wafer without dislocations. The role of the off-angle .THETA. of the substrate is preventing the influence of the dislocations from transmitting to the films. A smaller density D of the defects on the substrate allows a smaller off-angle .THETA. for suppressing the hillocks from arising. A larger density D of the defects demands a larger off-angle for the substrate so as to prevents the hillocks from originating. An inequality .THETA..ltoreq.1.times.10.sup.-3 D.sup.1/2 allows calculation of the off-angle .THETA. for preventing hillocks. More precisely, the inequlity is expressed as .THETA..ltoreq.1.26.times.10.sup.-3 D.sup.1/2.

    Abstract translation: 当化合物半导体膜在具有接近（100）取向的表面的InP晶片上生长时，倾向于在膜上产生小丘。 为了抑制小丘的发生，已经采用偏角晶片作为基板。 然而，来自（100）平面的偏角THETA不是确定电影上形成的小丘的唯一因素。 有一个隐藏的参数决定了小丘的产生。 在生长中的薄膜上引起小丘的缺陷是底物本身的缺陷。 没有小丘起源于对应于InP晶片的部分而没有位错的部分薄膜。 衬底的斜角THETA的作用是防止位错对膜的传输的影响。 衬底上缺陷的较小密度D允许较小的偏角THETA用于抑制小丘的产生。 缺陷的较大密度D需要较大的基板偏离角度，以防止小丘起源。 不等式THETA

    Method of storing semiconductor substrate
    8.
    发明授权
    Method of storing semiconductor substrate 失效
    存储半导体基板的方法

    公开(公告)号：US5105628A

    公开(公告)日：1992-04-21

    申请号：US455332

    申请日：1989-12-27

    Applicant: Ryusuke Nakai

    Inventor： Ryusuke Nakai

    IPC: H01L21/02 ,  H01L21/673

    CPC classification number: H01L21/67366 ,  H01L21/67376 ,  H01L21/67386 ,  H01L21/67389 ,  H01L21/67393

    Abstract: A method for storing a semiconductor substrate preserves the semiconductor substrate at a temperature not more than 10.degree. C. in a sealed manner. After the surface of the semiconductor substrate has been cleaned by etching or the like, the semiconductor substrate is put in a bag of a synthetic resin sheet. An inert gas is introduced into the bag or the bag is brought into a vacuum state, the bag is sealed, and then maintained at the above temperature, whereby the cleaned surface is not recontaminated for a prolonged period of time.

    Abstract translation: PCT No.PCT / JP88 / 00404 Sec。 371日期1989年12月27日第 102（e）日期1989年12月27日PCT提交1988年4月25日PCT公布。 出版物WO89 / 日期：1989年1月12日。一种用于存储半导体衬底的方法，以密封的方式将半导体衬底保持在不高于10℃的温度。 在通过蚀刻等清洁了半导体衬底的表面之后，将半导体衬底放入合成树脂片的袋中。 将惰性气体引入袋中或将袋子置于真空状态，将袋密封，然后保持在上述温度，从而清洁表面不会被长时间再污染。

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