发明授权
- 专利标题： Insulated gate-controlled thyristor having shorted anode
- 专利标题（中）： 绝缘栅极控制晶闸管具有短路阳极
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申请号： US667827申请日： 1984-11-02
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公开(公告)号： US4636830A公开(公告)日： 1987-01-13
- 发明人: Jayant K. Bhagat
- 申请人： Jayant K. Bhagat
- 申请人地址： MI Detroit
- 专利权人： General Motors Corporation
- 当前专利权人： General Motors Corporation
- 当前专利权人地址： MI Detroit
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/10 ; H01L29/423 ; H01L29/745 ; H01L29/749 ; H01L29/72 ; H01L29/08 ; H01L29/78
摘要：
A new semiconductor power device, suitable for electrical switching in automotive applications, is proposed. This device combines the low specific on-resistance achievable with bipolar regenerative switching devices with the convenience of insulated gate control of not only turn-on but also turn-off. A device structure is presented that also includes a pinch resistance effect to more rapidly produce turn-off. The anode region of the device is electrically shorted to its contiguous N-type region.
公开/授权文献
- US5110073A Flanged pipe support 公开/授权日：1992-05-05
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