发明授权
- 专利标题: Memory array biasing circuit for high speed CMOS device
- 专利标题(中): 用于高速CMOS器件的存储器阵列偏置电路
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申请号: US683062申请日: 1984-12-20
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公开(公告)号: US4636983A公开(公告)日: 1987-01-13
- 发明人: Kenneth E. Young , Bruce L. Bateman
- 申请人: Kenneth E. Young , Bruce L. Bateman
- 申请人地址: CA San Jose
- 专利权人: Cypress Semiconductor Corp.
- 当前专利权人: Cypress Semiconductor Corp.
- 当前专利权人地址: CA San Jose
- 主分类号: H03K19/00
- IPC分类号: H03K19/00 ; G11C7/12 ; H03K19/0948 ; G11C11/40
摘要:
A current limiting, process compensating circuit for CMOS memory arrays is provided. A dual transistor bias circuit is connected to each of a pair of columns of the array with a four transistor voltage reference circuit having its output connected to the gates of the active P-channel transistor of each bias circuit. A first P-channel transistor of the voltage reference circuit is sized to be less than the P-channel transistor of the bias circuit and the other three N-channel transistors are sized to be the same as the second transistor of the bias circuit and the two transistors of each memory cell in the array. As supply voltage to the array moves up or down making more or less current available, the combined circuit maintains nearly constant current on the first transistor of each bias circuit while compensating for process variation.
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