发明授权
- 专利标题： Nonvolatile memory device or a single crystal silicon film
- 专利标题（中）： 非易失存储器件或单晶硅膜
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申请号： US403016申请日： 1982-07-29
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公开(公告)号： US4653026A公开(公告)日： 1987-03-24
- 发明人: Kazuhiro Komori , Satoshi Meguro , Satoru Ito , Toshimasa Kihara , Harumi Wakimoto
- 申请人： Kazuhiro Komori , Satoshi Meguro , Satoru Ito , Toshimasa Kihara , Harumi Wakimoto
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX56-125189 19810812; JPX56-125204 19810812
- 主分类号： G11C11/40
- IPC分类号： G11C11/40 ; H01L27/088
摘要：
A nonvolatile memory device comprising a plurality of memory cells composed of insulated gate-type field effect semiconductor elements, terminals for applying a writing voltage and a reading voltage to said plurality of memory cells, wirings for connecting in common insulated gate-type field effect transistor elements of said plurality of memory cells, and resistance elements or MISFET's which are connected between the wirings and the terminals, wherein said resistance elements or MISFET's are composed of a polycrystalline silicon film or a single crystal silicon film formed on the field insulation film.
公开/授权文献
- US4990994A Electrode structure for silicon carbide semiconductors 公开/授权日：1991-02-05
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