发明授权
US4665006A Positive resist system having high resistance to oxygen reactive ion
etching
失效
具有高耐氧反应离子蚀刻性的正抗蚀剂体系
- 专利标题： Positive resist system having high resistance to oxygen reactive ion etching
- 专利标题（中）： 具有高耐氧反应离子蚀刻性的正抗蚀剂体系
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申请号： US806597申请日： 1985-12-09
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公开(公告)号： US4665006A公开(公告)日： 1987-05-12
- 发明人: Krishna G. Sachdev , Ranee W. Kwong , Mahmoud M. Khojasteh , Harbans S. Sachdev
- 申请人： Krishna G. Sachdev , Ranee W. Kwong , Mahmoud M. Khojasteh , Harbans S. Sachdev
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F7/039 ; G03F7/075 ; H01L21/027 ; G03C5/16 ; G03C1/495 ; G03F7/26
摘要：
A photoresist composition comprised of a radiation scissionable polymeric system having organopolysiloxane segments sensitized by an onium salt is disclosed. Useful organopolysiloxane containing polymers include polysiloxane-polycarbonate block copolymers, and polyorganosiloxane polyaryl esters. The resist films produced from the photoresist compositions exhibit high sensitivity, high thermal stability and resistance to oxygen reactive ion etching which makes them desirable for dry etching processes to enable submicron resolution.
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