发明授权
- 专利标题: Plasma treatment system
- 专利标题(中): 等离子体处理系统
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申请号: US750474申请日: 1985-07-01
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公开(公告)号: US4683838A公开(公告)日: 1987-08-04
- 发明人: Shin-Ichiro Kimura , Eiichi Murakami , Terunori Warabisako , Kiyoshi Miyake , Hideo Sunami
- 申请人: Shin-Ichiro Kimura , Eiichi Murakami , Terunori Warabisako , Kiyoshi Miyake , Hideo Sunami
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; C23C14/22 ; C23C14/32 ; H01J37/32 ; H01L21/3065 ; C23C16/00
摘要:
An insulator film can be formed at a low temperature without any damage to a substrate to be treated by a plasma in a plasma treatment system which comprises a magnetron for generating a microwave, an isolator for isolating a wave guide from the magnetron, a discharge tube for generating a plasma, the wave guide for leading the microwave from the magnetron to the discharge tube, a vacuum chamber integrally formed together with the discharge tube, an evaporation source provided in the vacuum chamber, a substrate to be treated and provided at a position to sandwich a stream of the plasma between the substrate and the evaporation source, electromagnets provided around the discharge tube and the vacuum chamber, and a manipulator for manipulating the substrate, the electromagnets generating a magnetic field to confine the stream of the plasma.
公开/授权文献
- US5780826A Container handling apparatus and management system 公开/授权日:1998-07-14
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