发明授权
- 专利标题： Silicon light emitting device and a method of making the device
- 专利标题（中）： 硅发光器件及其制造方法
-
申请号： US936987申请日： 1986-12-01
-
公开(公告)号： US4684964A公开(公告)日： 1987-08-04
- 发明人: Jacques I. Pankove , Chung P. Wu
- 申请人： Jacques I. Pankove , Chung P. Wu
- 申请人地址： NJ Princeton
- 专利权人： RCA Corporation
- 当前专利权人： RCA Corporation
- 当前专利权人地址： NJ Princeton
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01L33/00 ; H01L45/00 ; H01L29/04 ; H01L29/34
摘要：
A light emitting device comprises a body of silicon having regions of opposite conductivity type and a region about the p-n junction between the regions of opposite conductivity type which contains lattice defects and excess hydrogen. This device emits light at a wavelength between about 1.2 and about 1.3 micrometers. The method of the invention includes the steps of damaging the region about the p-n junction and hydrogenating the damage region.
公开/授权文献
信息查询
IPC分类:
