公开(公告)号：US4392011A

公开(公告)日：1983-07-05

申请号：US309695

申请日：1981-10-08

申请人： Jacques I. Pankove ,  Chung P. Wu

发明人： Jacques I. Pankove ,  Chung P. Wu

IPC分类号： C30B1/02 ,  H01L21/20 ,  H01L21/268 ,  H01L31/068 ,  H01L31/18 ,  H01L31/06

CPC分类号： H01L21/2026 ,  C30B1/023 ,  H01L21/268 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T428/12674

摘要： A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

摘要翻译： 具有大于1.1eV的带隙能的新型富氢单晶硅材料可以通过在单晶硅体中形成梯度结晶度的非晶区域，然后使该区域与原子氢接触，然后在 足够的功率和足够的持续时间将该区域重结晶成单晶硅而不排出氢气。 新材料可用于制造诸如单晶硅太阳能电池的半导体器件，其具有比不含氢的单晶硅具有更大带隙能量的表面窗口区域。

公开(公告)号：US4322253A

公开(公告)日：1982-03-30

申请号：US145239

申请日：1980-04-30

申请人： Jacques I. Pankove ,  Chung P. Wu

发明人： Jacques I. Pankove ,  Chung P. Wu

IPC分类号： C30B1/02 ,  H01L21/20 ,  H01L21/268 ,  H01L31/068 ,  H01L31/18 ,  H01L21/26 ,  H01L21/265 ,  H01L45/00

CPC分类号： C30B1/023 ,  H01L21/2026 ,  H01L21/268 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.

摘要翻译： 具有大于1.1eV带隙能量的新型富氢单晶硅材料可以通过在单晶硅体中形成梯度结晶度的非晶区域，然后使该区域与原子氢接触，随后在 足够的功率和足够的持续时间将该区域重结晶成单晶硅而不使氢气逸出。 新材料可用于制造半导体器件，例如单晶硅太阳能电池，具有比无氢的单晶硅具有更大带隙能量的表面窗口区域。

公开(公告)号：US4684964A

公开(公告)日：1987-08-04

申请号：US936987

申请日：1986-12-01

申请人： Jacques I. Pankove ,  Chung P. Wu

发明人： Jacques I. Pankove ,  Chung P. Wu

IPC分类号： H01L21/30 ,  H01L33/00 ,  H01L45/00 ,  H01L29/04 ,  H01L29/34

CPC分类号： H01L33/0054 ,  H01L21/3003 ,  H01L33/0008

摘要： A light emitting device comprises a body of silicon having regions of opposite conductivity type and a region about the p-n junction between the regions of opposite conductivity type which contains lattice defects and excess hydrogen. This device emits light at a wavelength between about 1.2 and about 1.3 micrometers. The method of the invention includes the steps of damaging the region about the p-n junction and hydrogenating the damage region.

摘要翻译： 发光器件包括具有相反导电类型区域的硅体，以及包含晶格缺陷和过量氢的相反导电类型区域之间的p-n结的区域。 该装置发射约1.2和约1.3微米之间的波长的光。 本发明的方法包括损坏围绕p-n结的区域并使损伤区域氢化的步骤。

公开(公告)号：US5559822A

公开(公告)日：1996-09-24

申请号：US473523

申请日：1995-06-07

申请人： Jacques I. Pankove ,  Garret R. Moddel ,  Kenneth Douglas

发明人： Jacques I. Pankove ,  Garret R. Moddel ,  Kenneth Douglas

IPC分类号： H01S5/187 ,  H01S5/32 ,  H01S5/34 ,  H01S5/40 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/341 ,  H01S5/187 ,  H01S5/3226 ,  H01S5/3412 ,  H01S5/3427 ,  H01S5/4087 ,  Y10S977/951

摘要： Dynamic variation in the color produced by a silicon quantum dot laser is achieved by utilizing segmented sections or patches of quantum dots of differing sizes to produce different colors of light. The amount of each color of light produced is controlled by selectively biasing the segments of quantum dots. The light is caused to resonate coherently and is emitted out by a diffraction grating. The dynamic variation in the color of light produced by such a device makes it useful as a multicolor pixel in a color display of images.

摘要翻译： 硅量子点激光器产生的颜色的动态变化通过利用不同大小的量子点的分割段或块来实现，以产生不同颜色的光。 通过选择性地偏置量子点的片段来控制产生的每种颜色的颜色的量。 使光线相干谐振，并由衍射光栅发射出去。 由这种装置产生的光的颜色的动态变化使得它可以用作图像的彩色显示器中的多色像素。

公开(公告)号：US5136353A

公开(公告)日：1992-08-04

申请号：US521781

申请日：1990-05-10

申请人： Jacques I. Pankove ,  Christian V. Radehaus

发明人： Jacques I. Pankove ,  Christian V. Radehaus

IPC分类号： H01L31/12 ,  H01L33/00 ,  H01S3/102

CPC分类号： H01L33/0016 ,  H01L31/125 ,  H01S3/1022 ,  Y10S257/921

摘要： The present invention relates to an optical switch which will generate and emit a beam of light when an optical signal is directed therein, but includes means to inhibit the generation of the beam of light when a second optical signal is directed therein. The switch includes a light emitter formed of a plurality of layers of alternating opposite conductivity type which is adapted to generate the beam of light when an optical signal is directed therein. A photovoltaic inhibitor is connected to the emitter so that any current generated by the inhibitor is applied across the emitter in a manner to prevent the generation of the light in the emitter. The photovoltaic inhibitor generates the current when a second optical signal is directed therein. Depending on the external circuit, the device can be operated in either a digital (bistable) or analog mode.

摘要翻译： 光开关本发明涉及一种光开关，其在光信号被引导时产生并发出光束，但是包括当第二光信号被引导到其中时抑制光束产生的装置。 开关包括由多个交替相反导电类型的层形成的发光体，当光信号被引导到其中时适于产生光束。 光电抑制剂连接到发射极，使得由抑制剂产生的任何电流以防止发射器中的光的产生的方式施加在发射器两端。 当第二光信号被引导到其中时，光伏抑制器产生电流。 根据外部电路，器件可以以数字（双稳态）或模拟模式工作。

公开(公告)号：US4551352A

公开(公告)日：1985-11-05

申请号：US692238

申请日：1985-01-17

申请人： Jacques I. Pankove

发明人： Jacques I. Pankove

IPC分类号： H01L31/04 ,  C23C16/24 ,  H01L21/205 ,  H01L21/30 ,  B05D3/06

CPC分类号： C23C16/24 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/3003

摘要： A layer of P-type hydrogenated amorphous silicon having a wide band gap and relatively low conductivity is formed by subjecting a substance to a gaseous mixture of a silicon hydride and an acceptor material in a glow discharge while heating the substrate to a temperature of no greater than 120.degree. C. The deposited acceptor-doped hydrogenated amorphous silicon layer is then heated at a temperature of between 130.degree. C. and 300.degree. C. to increase the conductivity of the layer.

摘要翻译： 通过使物质在辉光放电中将氢氧化硅和受主材料的气体混合物进行加热而形成具有宽带隙和相对低导电性的P型氢化非晶硅层，同时将衬底加热至不大于 然后在130℃至300℃的温度下加热沉积的受体掺杂的氢化非晶硅层，以增加该层的导电性。

公开(公告)号：US4139858A

公开(公告)日：1979-02-13

申请号：US859858

申请日：1977-12-12

申请人： Jacques I. Pankove

发明人： Jacques I. Pankove

IPC分类号： H01L31/0224

CPC分类号： H01L31/022466 ,  Y10S148/059 ,  Y10S148/113

摘要： A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N-type side of the semiconductor exposed to solar radiation.

摘要翻译： 一种太阳能电池，其包括具有P-N结的硅体，其中透明导电的N型氮化镓层作为欧姆接触，暴露于太阳辐射的半导体的N型侧。

公开(公告)号：US5146314A

公开(公告)日：1992-09-08

申请号：US602022

申请日：1990-10-23

申请人： Jacques I. Pankove

发明人： Jacques I. Pankove

IPC分类号： H01L23/373 ,  H01L23/473

CPC分类号： H01L23/473 ,  H01L23/3732 ,  H01L2924/0002 ,  H01L2924/3011

摘要： In a semiconductor device, a thin, synthetic diamond film (i.e. a man made film) enhances the transfer of heat from a semiconductor circuit chip to a cooling medium. The heat generating semiconductor circuit chip is located in efficient thermal transfer engagement with one surface of a synthetically deposited diamond film. The opposite surface of the diamond film forms the bottom wall of a cavity that contains a cooling medium. In one embodiment of the invention, the cavity is formed by depositing the diamond film on the surface of a silicon substrate, and then etching the silicon substrate to form an open-top cavity having side walls that comprise the silicon substrate, and having a bottom wall that comprises the diamond film. In a second embodiment of the invention, the open-top cavity is formed by an apertured silicon preform that is bonded to the diamond film. A capping member closes the top of the cavity. A cooling medium is placed within the cavity a fluid cooling medium may be circulated. through the cavity by the use of an inlet and an outlet that are located in the capping member.

摘要翻译： 在半导体器件中，薄的合成金刚石膜（即人造薄膜）增强了从半导体电路芯片到冷却介质的热传递。 发热半导体电路芯片位于与合成沉积的金刚石膜的一个表面有效的热转印接合。 金刚石膜的相对表面形成包含冷却介质的空腔的底壁。 在本发明的一个实施例中，通过将金刚石膜沉积在硅衬底的表面上形成空腔，然后蚀刻硅衬底以形成具有包括硅衬底的侧壁的开顶腔，并且具有底部 包括金刚石膜的墙壁。 在本发明的第二实施例中，开顶腔由接合到金刚石膜的多孔硅预制件形成。 封盖构件封闭空腔的顶部。 将冷却介质放置在空腔内，流体冷却介质可以循环。 通过使用位于封盖构件中的入口和出口穿过空腔。

公开(公告)号：US4979002A

公开(公告)日：1990-12-18

申请号：US404701

申请日：1989-09-08

申请人： Jacques I. Pankove

发明人： Jacques I. Pankove

IPC分类号： H01L27/15 ,  H01L33/00 ,  H01S5/06 ,  H01S5/062 ,  H01S5/40 ,  H01S5/42

CPC分类号： H01L33/0016 ,  H01L27/153 ,  H01L33/0004 ,  H01S5/0608 ,  H01S5/4031 ,  H01L27/156 ,  H01S5/0607 ,  H01S5/06203 ,  H01S5/42 ,  Y10S257/926

摘要： An optical switching array includes a body of a semiconductor material having opposed surfaces. A plurality of spaced bodies of a semiconductor material are on one of the surfaces of the substrate. Each body includes four superimposed regions extending thereacross with the regions being of alternating opposite conductivity type to form PN junctions between adjacent regions. The bodies are capable of emitting light in response to an optical input when an electrical bias is applied thereacross. A fifth region extends across each body and forms a Zener diode with one of the outer region of the body. The Zener diode is adapted to limit the voltage drop across the bodies when one of the bodies is biased to emit light so as to permit more than one body to be turned to its light emitting condition at any one time.

摘要翻译： 光开关阵列包括具有相对表面的半导体材料体。 多个间隔开的半导体材料体在衬底的一个表面上。 每个主体包括四个叠加的区域，其中跨越的区域具有交替的相反导电类型，以在相邻区域之间形成PN结。 当在其上施加电偏压时，物体能够响应于光学输入而发光。 第五区域延伸穿过每个主体并且与主体的外部区域中的一个形成齐纳二极管。 齐纳二极管适用于限制当物体中的一个被偏压发光时跨过物体的电压降，从而允许多于一个物体在任何一个时间转到其发光状态。

公开(公告)号：US4977433A

公开(公告)日：1990-12-11

申请号：US428388

申请日：1989-10-27

申请人： Jacques I. Pankove

发明人： Jacques I. Pankove

IPC分类号： H01L31/153 ,  H01L33/00

CPC分类号： H01L31/153 ,  H01L33/0016 ,  Y10S257/921

摘要： An optoelectronic device having an optical switch which can be turned on and off optically by a beam of light. The device includes the optical switch having a first optically variable resistance device connected in series with the switch and one side of a source of current, and a second optically variable resist device connected in series with the switch and one side of a source of current, and a second optically variable resistance device connected in series with the switch and the other side of the current source. The switch is capable of emitting light when a voltage above a threshold is applied thereto. By directing a light into the first optically variable resistance device the voltage applied across the switch is increased to a level just below the threshold and is raised to at least the threshold by directing a light into the switch so as to turn on the switch. The switch is turned off by directing a beam of light into the second optically variable resistance device which reduces the voltage applied across the switch below a holding voltage.

摘要翻译： 具有光学开关的光电子器件，该光学开关可以通过光束被光学地接通和断开。 该装置包括光开关，其具有与开关串联连接的第一光可变电阻装置和电流源的一侧，以及与开关和电流源的一侧串联连接的第二光可变阻抗装置， 以及与开关和电流源的另一侧串联连接的第二光可变电阻装置。 当施加高于阈值的电压时，开关能够发光。 通过将光引导到第一光学可变电阻装置中，跨越开关的电压增加到刚好低于阈值的水平，并且通过将光引入开关中而将其升高至至少阈值，以便接通开关。 通过将光束引导到第二光学可变电阻装置中来将开关关闭，这将降低施加在开关上的电压降低到保持电压以下。