发明授权
US4684966A Static induction transistor photodetector having a deep shielding gate
region
失效
具有深屏蔽栅极区域的静电感应晶体管光电探测器
- 专利标题： Static induction transistor photodetector having a deep shielding gate region
- 专利标题（中）： 具有深屏蔽栅极区域的静电感应晶体管光电探测器
-
申请号： US745972申请日： 1985-07-16
-
公开(公告)号： US4684966A公开(公告)日： 1987-08-04
- 发明人: Junichi Nishizawa , Sobei Suzuki , Takashige Tamamushi
- 申请人： Junichi Nishizawa , Sobei Suzuki , Takashige Tamamushi
- 申请人地址： JPX Sendai
- 专利权人： Nishizawa; Junichi
- 当前专利权人： Nishizawa; Junichi
- 当前专利权人地址： JPX Sendai
- 优先权： JPX57-218591 19821213
- 主分类号： H01L27/146
- IPC分类号： H01L27/146 ; H01L29/10 ; H01L31/10 ; H01L29/80 ; H01L27/14
摘要：
A semiconductor photodetector, and a process for producing a semiconductor photodetector, having a shielding gate region isolated from drain or source regions with only a small junction capacitance therebetween. The photodetector is implemented with a vertical static induction transistor. In the static induction transistor, a control gate region is formed on a first principal surface of a silicon wafer. The shielding gate region is formed on the principal surface surrounding the control gate region. At least one first principal electrode region is formed on the first principal surface between the control region and the shielding gate region. A second principal electrode region is formed on a second principal surface of the wafer on the side thereof opposite the first principal electrode region. The shielding gate region is formed in the silicon wafer at a position deeper than the first principal electrode region.
公开/授权文献
信息查询
IPC分类:
