发明授权
- 专利标题： Method for manufacturing a semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US804092申请日： 1985-12-03
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公开(公告)号： US4702937A公开(公告)日： 1987-10-27
- 发明人: Hisayoshi Yamoto , Hideo Suzuki
- 申请人： Hisayoshi Yamoto , Hideo Suzuki
- 申请人地址： JPX Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX59-256274 19841204
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/02 ; H01L21/324 ; H01L21/822 ; H01L21/8244 ; H01L27/11 ; H01L21/285
摘要：
The invention relates to a method for manufacturing a semiconductor device with a resistor having a high resistance.In the invention, a first polycrystalline silicon layer is first formed to connect with an electrically connecting portion formed in a semiconductor substrate. Next, a second polycrystalline silicon layer containing oxygen is formed on the first polycrystalline silicon layer. And then, an oxide formed between the two polycrystalline silicon layer is removed by annealing.
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