发明授权
- 专利标题: Distributed feedback semiconductor laser
- 专利标题(中): 分布式反馈半导体激光器
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申请号: US767631申请日: 1985-08-20
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公开(公告)号: US4720836A公开(公告)日: 1988-01-19
- 发明人: Tadashi Fukuzawa , Hiroyoshi Matsumura , Shinji Tsuji , Hitoshi Nakamura , Kenji Hiruma
- 申请人: Tadashi Fukuzawa , Hiroyoshi Matsumura , Shinji Tsuji , Hitoshi Nakamura , Kenji Hiruma
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX59-201657 19840928
- 主分类号: H01S5/00
- IPC分类号: H01S5/00 ; H01S5/12 ; H01S5/34 ; H01S3/08 ; H01S3/19
摘要:
The present invention relates to a semiconductor laser which oscillates in a single longitudinal mode and with a low threshold current and which exhibits a good mode stability against reflected light, and provides a structure of a distributed feedback semiconductor laser with modulation for a gain. The structure is such that gain producing regions are periodically arranged and that a substance transparent to laser radiation is buried between the regions. A layer including the gain regions is formed of a superlattice layer, and an impurity is diffused or implanted into periodic positions of the layer, whereby the transparent regions and the gain regions with little lattice damages can be readily formed.
公开/授权文献
- US5772105A Clad shape memory alloy composite structure and method 公开/授权日:1998-06-30
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