发明授权
- 专利标题： Semiconductor laser device with decreased light intensity noise
- 专利标题（中）： 半导体激光器件具有降低的光强度噪声
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申请号： US948393申请日： 1986-12-30
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公开(公告)号： US4731792A公开(公告)日： 1988-03-15
- 发明人: Hirokazu Shimizu , Masahiro Kume , Masuru Wada , Kunio Itoh , Ken Hamada , Fumiko Tajiri
- 申请人： Hirokazu Shimizu , Masahiro Kume , Masuru Wada , Kunio Itoh , Ken Hamada , Fumiko Tajiri
- 申请人地址： JPX Kadoma
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Kadoma
- 优先权： JPX58-117650 19830629; JPX58-117651 19830629
- 主分类号： H01S5/00
- IPC分类号： H01S5/00 ; H01S5/028 ; H01S5/0683 ; H01S5/223 ; H01S3/19
摘要：
In a TRS (twin ridge substrate) type semiconductor laser, reflectivity at both facets of the resonator at the oscillation wavelength is selected to be higher than the reflectivity of the semiconductor crystal of the laser device, but smaller than 1, thereby stabilizing the light oscillation with a low S/N ratio.
公开/授权文献
- US5280733A Remote control assembly including side-mount connector 公开/授权日：1994-01-25
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