公开(公告)号：US4731792A

公开(公告)日：1988-03-15

申请号：US948393

申请日：1986-12-30

申请人： Hirokazu Shimizu ,  Masahiro Kume ,  Masuru Wada ,  Kunio Itoh ,  Ken Hamada ,  Fumiko Tajiri

发明人： Hirokazu Shimizu ,  Masahiro Kume ,  Masuru Wada ,  Kunio Itoh ,  Ken Hamada ,  Fumiko Tajiri

IPC分类号： H01S5/00 ,  H01S5/028 ,  H01S5/0683 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/028 ,  H01S5/0014 ,  H01S5/0683 ,  H01S5/2232 ,  H01S5/2235

摘要： In a TRS (twin ridge substrate) type semiconductor laser, reflectivity at both facets of the resonator at the oscillation wavelength is selected to be higher than the reflectivity of the semiconductor crystal of the laser device, but smaller than 1, thereby stabilizing the light oscillation with a low S/N ratio.

摘要翻译： 在TRS（双脊衬底）型半导体激光器中，选择谐振器在振荡波长处的两个面处的反射率高于激光器件的半导体晶体的反射率，但小于1，从而稳定光振荡 S / N比低。

公开(公告)号：US4745611A

公开(公告)日：1988-05-17

申请号：US922654

申请日：1986-10-24

申请人： Ken Hamada ,  Kunio Itoh ,  Masahiro Kume ,  Takao Shibutani ,  Hirokazu Shimizu

发明人： Ken Hamada ,  Kunio Itoh ,  Masahiro Kume ,  Takao Shibutani ,  Hirokazu Shimizu

IPC分类号： H01S5/16 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2232 ,  H01S5/16

摘要： A BTRS (buried Twin-Ridge Substrate) structure laser, wherein an oblong protrusion (10) is provided on a substrate (1) of a first conductivity type and two ridges (9, 9) divided by a groove (31) therebetween are provided on a second layer (2) of a second conductivity type, and thereon plural layers (3, 4, 5, 6) including an active layer (4) are provided is improved to have longer service life such that: the protrusion (10) is shortened so as to have its both ends apart inside cavity facet of the substrate (1), or further by width of each ridge (9, 9) is narrowed at both ends thereof thereby forming narrowed end parts (9', 9'), so that excessive current injection to the active layer near the cavity facet is eliminated.

摘要翻译： 一种BTRS（埋藏双脊基板）结构激光器，其中在第一导电类型的基板（1）上设置有长方形突起（10），并且在它们之间划分有两个脊（9,9）和一个凹槽（31） 在第二导电类型的第二层（2）上设置有包括有源层（4）的多个层（3,4,5,6），其具有更长的使用寿命，使得：突起（10） 被缩短为使得其两端分开在基板（1）的腔面内，或者每个脊（9,9）的宽度在其两端变窄，从而形成变窄的端部部分（9'，9'） ，从而消除了在腔面附近对活性层的过度电流注入。

公开(公告)号：US5587334A

公开(公告)日：1996-12-24

申请号：US285357

申请日：1994-08-03

申请人： Hiroki Naito ,  Masahiro Kume ,  Hideyuki Sugiura ,  Toru Takayama ,  Kunio Itoh ,  Issei Ohta ,  Hirokazu Shimizu

发明人： Hiroki Naito ,  Masahiro Kume ,  Hideyuki Sugiura ,  Toru Takayama ,  Kunio Itoh ,  Issei Ohta ,  Hirokazu Shimizu

IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01L21/20

CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/221 ,  H01S5/3211 ,  H01S5/32308 ,  H01S5/3432

摘要： A semiconductor laser device of low operating current and low noise for the 780 nm band to be used as the light source for an optical disc and its fabrication method. The device comprises: a certain conduction type Ga.sub.1-Y1 Al.sub.Y1 As first light guide layer, a Ga.sub.1-Y2 Al.sub.Y2 As second light guide layer of said certain conduction type, or an In.sub.0.5 Ga.sub.0.5 P or an In.sub.0.5 (GaAl).sub.0.5 P or an InGaAsP second light guide layer, successively formed one upon another at least in one side of the principal plane of an active layer; an opposite conduction type Ga.sub.1-Z Al.sub.Z As current blocking layer formed on the second light guide layer and provided with a stripe-like window; and a Ga.sub.1-Y3 Al.sub.Y3 As cladding layer of the same conduction type a said light guide layers formed on said stripe-like window, wherein relations of Z>Y3>Y2 and Y1>Y2 are established among Y1, Y2 Y3 and Z that define the AlAs mole-fractions.

摘要翻译： 用作780nm波段的低工作电流和低噪声的半导体激光器件用作光盘的光源及其制造方法。 该装置包括：一定导电型Ga1-Y1AlY1As第一导光层，具有所述一定导电类型的Ga1-Y2AlY2As第二导光层，或In0.5Ga0.5P或In0.5（GaAl）0.5P或InGaAsP 第二导光层，在有源层的主平面的至少一个侧面依次形成; 形成在第二导光层上并具有条状窗的相反导电型Ga1-ZAlZAs电流阻挡层; 以及形成在所述条状窗口上的所述导光层具有相同导电类型的Ga1-Y3AlY3As覆层，其中在Y1，Y2 Y3和Z之间建立Z> Y3> Y2和Y1> Y2的关系，其定义AlAs 摩尔分数。

公开(公告)号：US5386429A

公开(公告)日：1995-01-31

申请号：US40655

申请日：1993-03-31

申请人： Hiroki Naito ,  Masahiro Kume ,  Hideyuki Sugiura ,  Toru Takayama ,  Kunio Itoh ,  Issei Ohta ,  Hirokazu Shimizu

发明人： Hiroki Naito ,  Masahiro Kume ,  Hideyuki Sugiura ,  Toru Takayama ,  Kunio Itoh ,  Issei Ohta ,  Hirokazu Shimizu

IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/221 ,  H01S5/3211 ,  H01S5/32308 ,  H01S5/3432

摘要： A semiconductor laser device suitable as a light source for an optical disk may be operated at a low operating current with low noise for the 780 nm band. The device comprises: a certain conduction type Ga.sub.1-Y1 Al.sub.Y1 As first light guide layer, a Ga.sub.1-Y2 Al.sub.Y2 As second light guide layer of said certain conduction type, or an In.sub.0.5 Ga.sub.0.5 P or an In.sub.0.5 (GaAl).sub.0.5 P or an InGaAsP second light guide layer, successively formed one upon another at least in one side of the principal plane of an active layer; an opposite conduction type Ga.sub.1-Z Al.sub.Z As current blocking layer formed on the second light guide layer and provided with a stripe-like window; and a Ga.sub.1-Y3 Al.sub.Y3 As cladding layer of the same conduction type as the light guide layers formed on the stripe-like window. The relations of Z>Y3>Y2 and Y1>Y2 define the AlAs mole fractions.

摘要翻译： 适合作为光盘的光源的半导体激光器装置可以在780nm波段的低噪声的低工作电流下工作。 该装置包括：一定导电型Ga1-Y1AlY1As第一导光层，具有所述一定导电类型的Ga1-Y2AlY2As第二导光层，或In0.5Ga0.5P或In0.5（GaAl）0.5P或InGaAsP 第二导光层，在有源层的主平面的至少一个侧面依次形成; 形成在第二导光层上并具有条状窗的相反导电型Ga1-ZAlZAs电流阻挡层; 以及与形成在条状窗上的导光层相同的导电类型的Ga1-Y3AlY3As包覆层。 Z> Y3> Y2和Y1> Y2的关系定义了AlAs摩尔分数。

公开(公告)号：US5031186A

公开(公告)日：1991-07-09

申请号：US494075

申请日：1990-03-15

申请人： Shinichi Takigawa ,  Masahiro Kume ,  Hirokazu Shimizu

发明人： Shinichi Takigawa ,  Masahiro Kume ,  Hirokazu Shimizu

IPC分类号： H01S5/028

CPC分类号： H01S5/028

摘要： A semiconductive laser device having a resonator which is formed with a dielectric film on at least one end face thereof is described. The dielectric film is in a thickness of at least three times a wavelength in the dielectric film by which the oscillation wavelength becomes very stable.

摘要翻译： 描述了具有在其至少一个端面上形成有电介质膜的谐振器的半导体激光器件。 电介质膜的厚度至少为电介质膜中波长变得非常稳定的3倍以上。

公开(公告)号：US08669571B2

公开(公告)日：2014-03-11

申请号：US13701998

申请日：2011-07-04

申请人： Akihiko Murai ,  Masahiro Kume ,  Akiko Nakamura ,  Tooru Aoyagi ,  Kiyoshi Fujihara

发明人： Akihiko Murai ,  Masahiro Kume ,  Akiko Nakamura ,  Tooru Aoyagi ,  Kiyoshi Fujihara

IPC分类号： H01L33/00

CPC分类号： G09F13/04 ,  G02B19/0028 ,  G02B19/0066 ,  G02B19/0071 ,  H01L33/005 ,  H01L33/50 ,  H01L33/58

摘要： A light distribution controller of a light-emitting device includes a first optical member formed of ZnO disposed over an LED interposing a transparent adhesive, and a second optical member which covers the first optical member. The first optical member includes a first concave portion having an opening in a regular hexagon shape whose area gradually increases. In the first concave portion, inner wall surfaces having inclined surfaces, each of whose bases is formed by one side of the hexagon of the opening shape, are formed. Outside of the first optical member, outer wall surfaces each having a trapezoidal shape are formed. The second optical member includes a second concave portion arranged so that light at an annular peak in the light distribution characteristic of the light traveled through the first optical member is totally reflected.

摘要翻译： 发光装置的配光控制器包括由设置在插入透明粘合剂的LED上的ZnO形成的第一光学部件和覆盖第一光学部件的第二光学部件。 第一光学构件包括具有正六边形形状的开口的第一凹部，其面积逐渐增加。 在第一凹部中，形成具有倾斜面的内壁面，其各自的底部由开口形状的六边形的一侧形成。 在第一光学构件的外侧，形成各自具有梯形形状的外壁面。 第二光学构件包括第二凹部，其布置成使得通过第一光学构件行进的光的光分布特性中的环形峰值处的光被全反射。

公开(公告)号：US20090232178A1

公开(公告)日：2009-09-17

申请号：US12392469

申请日：2009-02-25

申请人： Koichi HAYAKAWA ,  Toru Takayama ,  Masahiro Kume ,  Tomoya Satoh ,  Isao Kidoguchi

发明人： Koichi HAYAKAWA ,  Toru Takayama ,  Masahiro Kume ,  Tomoya Satoh ,  Isao Kidoguchi

IPC分类号： H01S5/327

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/1064 ,  H01S5/2231 ,  H01S5/3403 ,  H01S5/3432 ,  H01S5/34326 ,  H01S5/4087 ,  H01S2301/18

摘要： A semiconductor laser device has a first light emitting portion and a second light emitting portion having a longer emission wavelength than that of the first light emitting portion. Each of the first light emitting portion and the second light emitting portion has a stripe-shaped ridge structure used for carrier injection. The ridge structure in the first light emitting portion includes a first front end region having a width Wf1 and having a length L3 from a front facet, a first rear end region having a width Wr1 and having a length L1 from a rear facet, and a first tapered region located between the first front end region and the first rear end region and having a length L2, and the relation of Wf1>Wr1 is satisfied. The ridge structure in the second light emitting portion includes a second front end region having a width Wf2 and having a length L6 from a front facet, a second rear end region having a width Wr2 and having a length L4 from a rear facet, and a second tapered region located between the second front end region and the second rear end region and having a length L5, and the relation of Wf2>Wr2 is satisfied. The relations of L1+L2+L3=L4+L5+L6, Wf1 L4 are also satisfied.

摘要翻译： 半导体激光装置具有比第一发光部的发光波长长的第一发光部和第二发光部。 第一发光部分和第二发光部分中的每一个具有用于载体注入的条形脊结构。 第一发光部的脊结构具有第一前端区域，具有宽度Wf1并且具有来自前端面的长度L3，具有宽度Wr1的第一后端区域和具有来自后面的长度L1的第一前端区域，以及 位于第一前端区域和第一后端区域之间并且具有长度L2的第一锥形区域，并且满足Wf1> Wr1的关系。 第二发光部的脊部结构包括具有宽度Wf2的第二前端区域，具有来自前端面的长度L6，具有宽度Wr2的第二后端区域，并且具有来自后面的长度L4， 位于第二前端区域和第二后端区域之间并且具有长度L5的第二锥形区域，并且满足Wf2> Wr2的关系。 还满足L1 + L2 + L3 = L4 + L5 + L6，Wf1 L4的关系。

公开(公告)号：US20060239321A1

公开(公告)日：2006-10-26

申请号：US11327405

申请日：2006-01-09

申请人： Masahiro Kume ,  Toshitaka Shimamoto ,  Isao Kidoguchi ,  Tomoaki Uno

发明人： Masahiro Kume ,  Toshitaka Shimamoto ,  Isao Kidoguchi ,  Tomoaki Uno

IPC分类号： H01S5/00

CPC分类号： H01S5/4031 ,  B82Y20/00 ,  G11B7/1275 ,  G11B2007/0006 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/162 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/3436 ,  H01S5/4087

摘要： A semiconductor laser device includes a first semiconductor laser element for emitting a first laser light having a first oscillation wavelength of λ1 and a second semiconductor laser element for emitting a second laser light having a second oscillation wavelength of λ2 (wherein λ2≧λ1), which are formed on a single substrate. A first dielectric film which has a refractive index of n1 with respect to a wavelength λ between the first oscillation wavelength λ1 and the second oscillation wavelength λ2 and has a film thickness of approximately λ/(8n1) is formed at light emitting facets in the first semiconductor laser element and the second semiconductor laser element, from which the laser lights are emitted, and a second dielectric film having a refractive index of n2 and a film thickness of λ/(8n2) are formed on the first dielectric film.

摘要翻译： 半导体激光器件包括用于发射具有第一振荡波长λ1的第一激光的第一半导体激光元件和用于发射具有第二振荡波长λ的第二激光元件的第二半导体激光元件 其中形成在单个衬底上的第二层（其中λ2

公开(公告)号：US06165812A

公开(公告)日：2000-12-26

申请号：US913659

申请日：1997-09-19

申请人： Akihiko Ishibashi ,  Yuuzaburou Ban ,  Hidemi Takeisi ,  Nobuyuki Uemura ,  Masahiro Kume ,  Isao Kidoguchi

发明人： Akihiko Ishibashi ,  Yuuzaburou Ban ,  Hidemi Takeisi ,  Nobuyuki Uemura ,  Masahiro Kume ,  Isao Kidoguchi

IPC分类号： C30B25/02 ,  H01L33/00 ,  H01L33/32 ,  H01L21/00

CPC分类号： H01L33/32 ,  C30B25/02 ,  C30B29/406 ,  H01L33/007

摘要： The method for producing gallium nitride group compound semiconductor includes the steps of: forming a polycrystalline nitride layer 11a in a first temperature range on a substrate 10; forming a nucleus layer 11b of gallium nitride single crystals in a second temperature range on the polycrystalline nitride layer 11a; growing the nucleus layer 11b of gallium nitride single crystals in a third temperature range such that resulting crystals of the nucleus layer 11b of gallium nitride single crystals come into contact with each other in a direction parallel to a surface of the substrate 10; and growing the nucleus layer 11b of gallium nitride single crystals in a fourth temperature range in a direction vertical to the surface of the substrate 10.

摘要翻译： PCT No.PCT / JP97 / 00056 Sec。 371 1999年9月19日第 102（e）1999年9月19日PCT PCT 1997年1月14日PCT公布。 公开号WO97 / 26680 日期1997年7月24日制造氮化镓基化合物半导体的方法包括以下步骤：在基板10上形成第一温度范围内的多晶氮化物层11a; 在第二温度范围内在多晶氮化物层11a上形成氮化镓单晶的核层11b; 在第三温度范围内生长氮化镓单晶的核层11b，使得氮化镓单晶的核层11b的晶体在平行于衬底10的表面的方向上彼此接触; 并且在与衬底10的表面垂直的方向上的第四温度范围内生长氮化镓单晶的核层11b。

公开(公告)号：US5923950A

公开(公告)日：1999-07-13

申请号：US872154

申请日：1997-06-10

申请人： Akihiko Ishibashi ,  Yuzaburo Ban ,  Yoshihiro Hara ,  Nobuyuki Uemura ,  Masahiro Kume

发明人： Akihiko Ishibashi ,  Yuzaburo Ban ,  Yoshihiro Hara ,  Nobuyuki Uemura ,  Masahiro Kume

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L33/00

CPC分类号： H01L33/007 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  Y10S438/931

摘要： A method for manufacturing a semiconductor is disclosed. The method involves soaking a semiconductor substrate that consists of SiC for ten minutes in a buffered hydrofluoric acid, thereby etching the oxidized film formed on the surface of the semiconductor substrate. Then, TMA, NH.sub.3, TMG, and hydrogen for carrier are supplied at the rates of 10 .mu.mol/min., 2.5 L/min., and 2 L/min., respectively, to the semiconductor substrate at a temperature of 1090.degree. C. by using MOVPE. A buffer layer that consists of a single crystal AlN and has a thickness of about 15 nm is grown on the main surface of the semiconductor substrate. After lowering the temperature to 800.degree. C., TMA, TMG, TMI, and NH.sub.3 are supplied at the rates of 0.2 .mu.mol/min., 2 .mu.mol/min., 20 .mu.mol/min., and 5 L/min., respectively. A single crystal layer which consists of AlGaInN is thus grown on the buffer layer.

摘要翻译： 公开了半导体制造方法。 该方法包括将由SiC组成的半导体衬底浸入缓冲的氢氟酸中10分钟，从而蚀刻形成在半导体衬底的表面上的氧化膜。 然后，在1090℃的温度下分别以10微摩尔/分钟，2.5L /分和2L /分钟的速度向载体提供TMA，NH 3，TMG和氢气。 C.使用MOVPE。 在半导体衬底的主表面上生长由单晶AlN构成并具有约15nm的厚度的缓冲层。 将温度降至800℃后，以0.2微摩尔/分钟，2微摩尔/分钟，20微摩尔/分钟和5升/分钟的速率供给TMA，TMG，TMI和NH 3 。， 分别。 因此，由AlGaInN构成的单晶层在缓冲层上生长。